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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sarua, Andrei
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2018Impact of Sb and Na Doping on the Surface Electronic Landscape of Cu 2 ZnSnS 4 Thin Filmscitations
- 2018Impact of Sb and Na Doping on the Surface Electronic Landscape of Cu2ZnSnS4 Thin Filmscitations
- 2017Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cells:structure and device characteristicscitations
- 2017Single molecular precursor solution for CuIn(S,Se)2 thin films photovoltaic cellscitations
- 2017Top-down design of magnonic crystals from bottom-up magnetic nanoparticles through protein arrayscitations
- 2017Single Molecular Precursor Solution for CuIn(S,Se)2 Thin Films Photovoltaic Cells: Structure and Device Characteristicscitations
- 2015Integration of individual TiO2 nanotube on the chip: Nanodevice for hydrogen sensingcitations
- 2015Integration of individual TiO2 nanotube on the chipcitations
- 2013The influence of suspended nano-particles on the frederiks threshold of the nematic host
- 2013The influence of suspended nanoparticles on the Frederiks threshold of the nematic hostcitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Places of action
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document
Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Abstract
We report on the development of a novel thermography technique, integrated Raman - IR thermography, illustrated here on AlGaN/GaN electronic devices. As it is a generic technique future application to Si, GaAs and other devices is anticipated. While IR thermography can provide fast temperature overviews, its current use for many of today's technologies is complicated by the fact that it does not provide the spatial resolution needed to probe sub-micron/micron size active device areas Integrating IR with micro-Raman thermography, providing temperature information with similar to 0.5 mu m spatial resolution, enables unique thermal analysis of semiconductor devices to a level not possible before. This opens new opportunities for device performance and reliability optimization, and failure analysis of modern semiconductor technology, in research, development, and quality control / manufacturing environments.