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document
Structural, electrical and optical properties of Si-doped ZnO thin films grown by pulsed laser deposition
Abstract
We report here the synthesis of silicon doped zinc oxide (2 wt.% SiO<sub>2</sub>-ZnO) thin films by Pulsed Laser Deposition (PLD) with comparable electrical and optical properties to Indium Tin Oxide (ITO). ZnO is a candidate for electrode in flat panel displays including organic light-emitting diodes and windows in solar cells due to its combined properties. Unlike the more commonly used ITO, ZnO is non-toxic, inexpensive and abundant. The optimised film, deposited at 300˚C and an oxygen pressure of 5 mTorr, had a resistivity of 4.6 ×10-4 Ωcm and a transmittance of 92%.