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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ray, Samit Kumar
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2023Ni<sub>6</sub>Se<sub>5</sub>, an unexplored transition metal chalcogenide of formula M<sub>(n+1)</sub>X <sub>n</sub> (2 ≤ n ≤ 8), for high-performance hybrid supercapacitor and Li-ion battery applicationcitations
- 2016Studies on nanotribological and oxidation resistance properties of yttria stabilized zirconia (YSZ), alumina (Al2O3) based thin films developed by pulsed laser depositioncitations
- 2016Development and characterization of yttria stabilized zirconia and Al2O3 thin films by pulsed laser deposition
- 2015Phase Structure and Microstructure Of Yttria Stabilized Zirconia Thin Film Developed By Pulsed Laser Deposition
- 2013Studies on yttria stabilized zirconia coating developed by pulsed laser deposition
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article
Development and characterization of yttria stabilized zirconia and Al2O3 thin films by pulsed laser deposition
Abstract
The present study concerns development of yttria stabilized zirconia (YSZ), Al2O3 and a multilayer of Al2O3-YSZ thin film deposition by pulsed laser deposition (PLD) technique for its application as thermal barrier coating (TBC). The detailed study included characterization (microstructure, composition, phase and surface topography) of the thin film. The phase analysis of the YSZ films deposited at room temperature showed amorphous feature, while the film deposited at high temperature showed the formation of tetragonal phase. Residual stress analysis of the coating showed the presence of compressive stress and was maximum at 573 K (σ11 = -8.1 GPa and σ22 = -6.4 GPa). Residual stress was found to decease with increase in substrate temperature and was found to be lowest at 973 K (σ11 = -3.0 GPa and σ22 = -1.7 GPa). The cross-sectional morphology of the YSZ and Al2O3 thin films deposited at room temperature showed presence of inter-columnar porosities which changed to a dense structure with increase in substrate temperature.