| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Ikiades, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2005Strong refractive index changes induced in Ag ion exchanged Er doped phosphate glass using 248 nm excimer laser radiation
- 2004Photosensitivity of ion-exchanged Er-doped phosphate glass using 248nm excimer laser radiationcitations
- 2003Sub-micron period grating structures in Ta2O5 thin oxide films patterned using UV laser post-exposure chemically assisted selective etching
- 2003Sub-micron period grating structures in Ta 2 O 5 thin oxide films patterned using UV laser post-exposure chemically assisted selective etching
Places of action
| Organizations | Location | People |
|---|
document
Sub-micron period grating structures in Ta2O5 thin oxide films patterned using UV laser post-exposure chemically assisted selective etching
Abstract
Thin polycrystalline films of Ta<sub>2</sub>O<sub>5</sub> having high chemical resistance and large dielectric permittivity may be deposited by sputtering and have many applications in microelectronics and optoelectronics. A high-resolution and low-damage method for patterning relief structures in thin Ta<sub>2</sub>O<sub>5</sub> films by chemically assisted UV laser selective etching is presented. The method is based in the initial exposure of the Ta<sub>2</sub>O<sub>5</sub> films to pulsed UV radiation (quadrupled Nd:YAG laser at 266nm) at fluences below the ablation threshold, for the creation of volume damage in the exposed areas. Subsequent immersion of the exposed sample in a KOH solution results in selective etching of the UV-exposed areas, developing relief structures of high quality. Interferometric exposure was used for the patterning of such gratings with periods shorter than 500nm in films of thickness between 100nm and 500nm. The behaviour of the patterning process is studied using diffraction efficiency measurements, AFM and SEM scans. Diffraction efficiency increases by a factor of 66, compared to the undeveloped structure, were obtained for gratings exposed with 1000 pulses of 30mJ/cm<sup>2</sup> energy density, which were developed in a KOH solution of 50% weight concentration at a temperature of 55°C for 165mins. The etching method presented is being applied to the fabrication of optical waveguide gratings for telecommunication applications. Potential development of 2-D photonic crystal structures using this process is under investigation.