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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Friedman, D. J.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2004Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scatteringcitations
- 2003Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wellscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2002Interband Transitions in GaInNAs/GaAs Single Quantum Wells
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Effect of nitrogen on the band structure of III-N-V alloys
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article
Effect of nitrogen on the electronic band structure of group III-N-V alloys
Abstract
We have studied optical transitions at the Γ and L points of the Brillouin zone of GaN<sub>x</sub>As<sub>1-x</sub> and Al<sub>y</sub>-Ga<sub>1-y</sub>N<sub>x</sub>As<sub>1-x</sub> alloys using photomodulation spectroscopy. For GaN<sub>x</sub>As<sub>1-x</sub> with N contents between 0% and 2%, the N-induced shift of the conduction-band L minima is found to be only a fraction of the conduction-band edge shift at the Γ point. The measurements of Al<sub>y</sub>Ga<sub>1-y</sub>N<sub>x</sub>As<sub>1-x</sub> further show that there is no correlation between the location of the X conduction-band minima and the observed E<sub>+</sub> and E<sub>-</sub> transitions. The results demonstrate that the N-induced interactions between extended Γ, L, and X conduction-band states do not play a significant role in modification of the conduction-band structure of III-N-V alloys. The N-induced change of the conduction-band structure is predominantly influenced by the anticrossing interaction between the extended states of the Γ conduction band and the localized states of nitrogen. ©2000 The American Physical Society.