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Miotkowski, I.
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article
Band anticrossing in highly mismatched group II-VI semiconductor alloys
Abstract
We have successfully synthesized highly mismatched Cd<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> alloys by high-dose implantation of O ions into Cd<sub>1-y</sub>Mn<sub>y</sub>Te crystals. In crystals with y > 0.02, incorporation of O causes a large decrease in the bandgap. The bandgap reduction increases with y; the largest value observed is 190 meV in O<sup>+</sup> -implanted Cd<sub>0.38</sub>Mn<sub>0.62</sub>Te. The results are consistent with the band anticrossing (BAC) model, which predicts that a repulsive interaction between localized states of O located above the conduction-band edge and the extended states of the conduction band causes the bandgap reduction. A best fit of the measured bandgap energies of the O-ion-synthesized Cd<sub>1-y</sub>Mn<sub>y</sub>O<sub>x</sub>Te<sub>1-x</sub> alloys using the BAC model for y <0.55 suggests an activation efficiency of only ∼5% for implanted O in Cd<sub>1-y</sub>Mn<sub>y</sub>Te.