| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Furdyna, J. K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2008Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductorscitations
- 2005Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructurescitations
- 2004Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scatteringcitations
- 2004Determination of hole-induced ferromagnetic exchange between nearest-neighbor Mn spins in p-type Zn1-xMnxTe
- 2004Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growthcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scatteringcitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2003Ferromagnetic III-Mn-V semiconductors
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
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article
Ferromagnetic III-Mn-V semiconductors
Abstract
We present a systematic study on the growth and properties of ferromagnetic (FM) III-V-based semiconductor GaMnAs, including extrinsically-doped GaMnAs:Be and GaMnAs/ZnMnSe double layers. All specimens used in this study were grown by low-temperature molecular beam epitaxy (MBE). a method required for preventing the formation of MnAs precipitates. We carried out systematic annealing studies on the GaMnAs epilayers with Mn concentration ranging from 0.03 to 0.08. We found significant annealing-induced changes in the magnetic properties of these materials, that depended on the Mn concentration and on annealing conditions. In particular, annealing samples with higher Mn content at a low temperature (typically at T = 280 °C) was consistently observed to result in a dramatic increase of the Curie temperature (T<sub>c</sub>), typically to 110 K. Channeled Rutherford back scattering (c-RBS) and channeled particle-induced x-ray emission (c-PIXE) experiments carried out on GaMnAs shed important light on the mechanism responsible for this systematic and reproducible improvement in the FM properties of GaMnAs. By their ability to identify the position of Mn atoms in the GaMnAs lattice, these experiments clearly pointed to the crucial role which interstitial Mn atoms (Mn<sub>1</sub>) play in determining the FM parameters. In an attempt to further improve the T<sub>c</sub> of GaMnAs, we have undertaken a systematic program of extrinsic p-doping of this material. In GaMnAs with low x (x = 0.02), T<sub>c</sub> is indeed seen to increase monotonically with increased Be doping. However, we have observed a systematic decrease of T<sub>c</sub> with increasing Be doping in the case of GaMnAs with higher Mn content (x = 0.06). This surprising result can be understood in terms of a thermodynamic limit imposed on the hole concentration by the band structure of the material. Finally, we have demonstrated that the FM properties of GaMnAs epilayers can be significantly modified by the so-called "proximity effects" achieved by epitaxial deposition of other magnetic systems on GaMnAs. Specifically, we have observed that the deposition of ZnMnSe overlayers on GaMnAs leads to a clear increase of both the coercive field and of the Curie temperature of this FM alloy.