| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Furdyna, J. K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2012Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity bandcitations
- 2008Fermi Level Effects on Mn Incorporation in III-Mn-V Ferromagnetic Semiconductorscitations
- 2005Effects of Mn site Location on the magnetic properties of III 1-xMn xV semiconductors
- 2004Resonant spectroscopy of II-VI self-assembled quantum dots: Excited states and exciton-longitudinal optical phonon couplingcitations
- 2004Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1-xMnxV heterostructurescitations
- 2004Determination of hole-induced ferromagnetic Mn-Mn exchange in p-type Zn1-xMnxTe by inelastic neutron scatteringcitations
- 2004Determination of hole-induced ferromagnetic exchange between nearest-neighbor Mn spins in p-type Zn1-xMnxTe
- 2004Electronic effects determining the formation of ferromagnetic III 1-xMnx V alloys during epitaxial growthcitations
- 2004Lattice location of Mn and fundamental Curie temperature limit in ferromagnetic Ga1-xMnxAscitations
- 2003Probing hole-induced ferromagnetic exchange in magnetic semiconductors by inelastic neutron scatteringcitations
- 2003Curie temperature limit in ferromagnetic Ga1-xMnxAs
- 2003Ferromagnetic III-Mn-V semiconductors
- 2002Growth and optical properties of Mn-containing II-VI quantum dots
- 2002Determination of free hole concentration in ferromagnetic Ga 1-xMnxAs using electrochemical capacitance-voltage profilingcitations
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article
Curie temperature limit in ferromagnetic Ga1-xMnxAs
Abstract
We provide experimental evidence that the upper limit of ∼110 K commonly observed for the Curie temperature T<sub>C</sub> of Ga <sub>1-x</sub>Mn<sub>x</sub>As thin films (thickness >50 nm) is caused by Fermi-level-induced hole saturation. Ion channeling, electrical, and magnetization measurements on a series of Ga<sub>1-x-y</sub>Mn <sub>x</sub>Be<sub>y</sub>As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T<sub>C</sub> with increasing Be concentration, while the free hole concentration remains relatively constant at ∼5 × 10<sup>20</sup> cm<sup>-3</sup>. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors.