| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shan, W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2008Energetic Beam Synthesis of Dilute Nitrides and Related Alloyscitations
- 2005Highly mismatched alloys for intermediate band solar cells
- 2004Oxygen induced band-gap reduction in ZnOxSe1-x alloyscitations
- 2004Diluted ZnMnTe oxidecitations
- 2004Synthesis and properties of highly mismatched II-O-VI alloyscitations
- 2004Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloyscitations
- 2004Effect of oxygen on the electronic band structure of II-O-VI alloyscitations
- 2004Synthesis and optical properties of II-O-VI highly mismatched alloyscitations
- 2003Band-gap bowing effects in BxGa1-xAs alloyscitations
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2003Effect of oxygen on the electronic band structure in ZnOxSe1-x alloyscitations
- 2002Band anticrossing effects in MgyZn1-yTe 1-xSex alloyscitations
- 2000Effect of nitrogen on the electronic band structure of group III-N-V alloys
- 2000Synthesis of III-Nx-V1-x Thin Films by N Ion Implantationcitations
- 2000Effect of nitrogen on the band structure of III-N-V alloys
Places of action
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article
Highly mismatched alloys for intermediate band solar cells
Abstract
It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a "stepping stone" for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn <sub>1-y</sub>Mn <sub>y</sub>O <sub>x</sub>Te <sub>1-x</sub> alloys with x1-yMn <sub>y</sub>O <sub>x</sub>Te <sub>1-x</sub> alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band. © 2005 Materials Research Society.