• Scrapulla, M. A.
• Walukiewicz, W.
• Wu, J.
• Becla, P.
• Dubon, O. D.
• Shan, W.
• Iii, J. W. Ager

Abstract

It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a "stepping stone" for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn _1-yMn _yO _xTe _1-x alloys with x1-yMn _yO _xTe _1-x alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band. © 2005 Materials Research Society.

Topics

• impedance spectroscopy
• semiconductor
• power conversion efficiency