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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mars, D. E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2005Mutual passivation in dilute GaN xAs 1-x alloys
- 2005Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning
- 2003Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloyscitations
- 2003Mutual passivation effects in Si-doped diluted InyGa 1-yAs1-xNx alloys
- 2003Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloyscitations
- 2002Mutual passivation of electrically active and isovalent impuritiescitations
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article
Mutual passivation in dilute GaN xAs 1-x alloys
Abstract
The dilute GaN <sub>x</sub>As <sub>1.x</sub> alloys (with x up to 0.05) have exhibited many unusual properties as compared to the conventional binary and ternary semiconductor alloys. We report on a new effect in the GaN <sub>x</sub>As <sub>1-x</sub> alloy system in which electrically active substitutional group IV donors and isoelectronic N atoms passivate each other's activity. This mutual passivation occurs in dilute GaN <sub>x</sub>As <sub>1-x</sub> doped with group IV donors through the formation of nearest neighbor IVoaNAS pairs when the samples are annealed under conditions such that the diffusion length of the donors is greater than or equal to the average distance between donor and N atoms. The passivation of the shallow donors and the NAS atoms is manifested in a drastic reduction in the free electron concentration and, simultaneously, an increase in the fundamental bandgap. This mutual passivation effect is demonstrated in both Si and Ge doped GaN <sub>x</sub>As <sub>1-x</sub> alloys. Analytical calculations of the passivation process based on Ga vacancy mediated diffusion show good agreement with the experimental results. © 2005 Materials Research Society.