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Cui, Qingsong
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document
Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
Abstract
Transition metal di-chalcogenides (TMDCs) such as MoS2, MoSe2, WS2 and WSe2 have become promising complimentary materials to graphene sharing many of its attributes. They may however offer properties that are unattainable in graphene, in particular TMDCs offer a bandgap tunable through both composition and number of layers. This has led to use of TMDCs in applications such as transistors, photodetectors, electroluminescent and bio-sensing devices. The current challenge in this emerging research field is to provide a reliable process to fabricate large area of atomically thin 2D TMDCs on the desired substrate. Chemical vapor deposition (CVD) technology has the advantage of offering conformal, scalable, and controllable thin film growth on a variety of different substrates. In addition, Van der Waals epitaxy could provide the vapor phase epitaxy of these TMDCs on the substrates with mismatched lattice constants. In this talk we describe our recent development in TMDCs materials using CVD technology and Van der Waals epitaxy and discuss their properties and potential applications.