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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Chen, Yunzhong
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2022On the thermoelectric properties of Nb-doped SrTiO3 epitaxial thin filmscitations
- 2022On the thermoelectric properties of Nb-doped SrTiO 3 epitaxial thin filmscitations
- 2019Diluted Oxide Interfaces with Tunable Ground Statescitations
- 2017Scavenging of oxygen vacancies at modulation-doped oxide interfaces: Evidence from oxygen isotope tracingcitations
- 2017Microscopic origin of the mobility enhancement at a spinel/perovskite oxide heterointerface revealed by photoemission spectroscopycitations
- 2016Effects of spark plasma sintering conditions on the anisotropic thermoelectric properties of bismuth antimony telluridecitations
- 2012On the origin of metallic conductivity at the interface of LaAlO3/SrTiO3citations
- 2012Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures
- 2011Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser depositioncitations
- 2011Metallic and Insulating Interfaces of Amorphous SrTiO3-Based Oxide Heterostructurescitations
- 2010Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition
Places of action
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conferencepaper
Resistance switching of the interfacial conductance in amorphous SrTiO3 heterostructures
Abstract
Complex oxides have attracted a lot of interest recently as this class of material exhibits a plethora of remarkable properties. In particular, a great variety of properties is observed in the heterostructure composed of lanthanum aluminate (LaAlO3) and strontium titanate (SrTiO3). For instance, at the interface between the two insulating oxides LaAlO3 and SrTiO3 a high-mobility quasi-two-dimensional electron gas is formed if the thickness of LaAlO3 exceeds a critical value of 3 unit cells. At a thickness of 3 unit cells the interface remains insulating, however, an interface conductance can be induced by an electric field. It has previously been demonstrated that SrTiO3 heterostructures with amorphous LaAlO3 top layers can display interfacial conductivity with similar critical thickness dependence. Here, we report resistance switching of the interfacial conductance for SrTiO3 heterostructures with amorphous LaAlO3 top layers below the critical thickness in various controlled environments.