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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Andersen, Michael A. E.
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2018Analysis and Comparison of dc/dc Topologies in Partial Power Processing Configuration for Energy Storage Systemscitations
- 2016Advances in Piezoelectric Systems: An Application-Based Approach.
- 2014Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers
- 2014Piezoelectric stack actuator parameter extraction with hysteresis compensationcitations
- 2014Characterization of Dielectric Electroactive Polymer transducers
- 2014Analysis and Comparison of Si and SiC Power Devices on a Grid-Tie Fuel Cell Energy Storage Systemcitations
- 2004Safe-commutation principle for direct single-phase AC-AC converters for use in audio power amplification
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document
Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers
Abstract
Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded class D amplifiers. It is shown, that SiC MOSFETs can compete with Si MSOFETs in terms of THD. Validation is done using simulations and a500 V amplifier driving a 100 nF load. THD+N below 0.3 % is reported