Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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Naji, M.
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Tuominen, Eija

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University of Helsinki

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (8/8 displayed)

  • 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications1citations
  • 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications1citations
  • 2022Characterization of Heavily Irradiated Dielectrics for Pixel Sensors Coupling Insulator Applications1citations
  • 2022Characterisation of gamma-irradiated MCz-silicon detectors with a high-K negative oxide as field insulatorcitations
  • 2021Processing and Interconnections of Finely Segmented Semiconductor Pixel Detectors for Applications in Particle Physics and Photon Detection2citations
  • 2016Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors9citations
  • 2016Processing of n(+)/p(-)/p(+) strip detectors with atomic layer deposition (ALD) grown Al2O3 field insulator on magnetic Czochralski silicon (MCz-si) substrates14citations
  • 2014Pixel Detector Upgrade of CMS Experimentcitations

Places of action

Chart of shared publication
Ott, Jennifer
4 / 22 shared
Bharthuar, Shudhashil
3 / 7 shared
Kirschenmann, Stefanie
2 / 6 shared
Mizohata, Kenichiro
2 / 99 shared
Kramarenko, Nikita
2 / 4 shared
Koponen, Pirkitta
2 / 6 shared
Brucken, Jens Erik
2 / 6 shared
Golovleva, Maria
2 / 8 shared
Härkönen, Jaakko
3 / 10 shared
Luukka, Panja
6 / 14 shared
Bezak, Mihaela
2 / 5 shared
Gädda, Akiko
2 / 12 shared
Karadzhinova-Ferrer, Aneliya Georgieva
2 / 7 shared
Brücken, Erik
1 / 3 shared
Karadzhinova, Aneliya
1 / 1 shared
Mizohata, K.
1 / 6 shared
Kirschenmann, S.
2 / 6 shared
Kramarenko, N.
2 / 3 shared
Brücken, E.
2 / 4 shared
Gädda, A.
4 / 7 shared
Bezak, M.
3 / 5 shared
Bharthuar, S.
2 / 6 shared
Golovleva, M.
2 / 7 shared
Luukka, P.
2 / 6 shared
Härkönen, J.
3 / 6 shared
Karadzhinova-Ferrer, A.
2 / 6 shared
Ott, J.
2 / 4 shared
Väänänen, M.
1 / 1 shared
Karjalainen, A.
1 / 1 shared
Harkonen, J.
1 / 1 shared
Tuovinen, E.
2 / 3 shared
Gadda, A.
1 / 3 shared
Peltola, T.
1 / 8 shared
Tuovinen, Esa
1 / 3 shared
Niinistö, J.
1 / 5 shared
Arsenovich, Tatyana
3 / 3 shared
Ritala, Mikko
1 / 194 shared
Junkes, A.
2 / 2 shared
Mäkelä, Maarit
1 / 3 shared
Li, Z.
1 / 66 shared
Mäenpää, T.
1 / 1 shared
Wu, X.
1 / 36 shared
Vähänen, Sami
1 / 5 shared
Kalliopuska, Juha
1 / 1 shared
Tuovinen, Esa Veikko
1 / 1 shared
Mäenpää, Teppo H.
1 / 1 shared
Kassamakov, Ivan Vladislavov
1 / 1 shared
Peltola, Timo
1 / 3 shared
Chart of publication period
2022
2021
2016
2014

Co-Authors (by relevance)

  • Ott, Jennifer
  • Bharthuar, Shudhashil
  • Kirschenmann, Stefanie
  • Mizohata, Kenichiro
  • Kramarenko, Nikita
  • Koponen, Pirkitta
  • Brucken, Jens Erik
  • Golovleva, Maria
  • Härkönen, Jaakko
  • Luukka, Panja
  • Bezak, Mihaela
  • Gädda, Akiko
  • Karadzhinova-Ferrer, Aneliya Georgieva
  • Brücken, Erik
  • Karadzhinova, Aneliya
  • Mizohata, K.
  • Kirschenmann, S.
  • Kramarenko, N.
  • Brücken, E.
  • Gädda, A.
  • Bezak, M.
  • Bharthuar, S.
  • Golovleva, M.
  • Luukka, P.
  • Härkönen, J.
  • Karadzhinova-Ferrer, A.
  • Ott, J.
  • Väänänen, M.
  • Karjalainen, A.
  • Harkonen, J.
  • Tuovinen, E.
  • Gadda, A.
  • Peltola, T.
  • Tuovinen, Esa
  • Niinistö, J.
  • Arsenovich, Tatyana
  • Ritala, Mikko
  • Junkes, A.
  • Mäkelä, Maarit
  • Li, Z.
  • Mäenpää, T.
  • Wu, X.
  • Vähänen, Sami
  • Kalliopuska, Juha
  • Tuovinen, Esa Veikko
  • Mäenpää, Teppo H.
  • Kassamakov, Ivan Vladislavov
  • Peltola, Timo
OrganizationsLocationPeople

document

Pixel Detector Upgrade of CMS Experiment

  • Tuominen, Eija
  • Vähänen, Sami
  • Kalliopuska, Juha
  • Tuovinen, Esa Veikko
  • Arsenovich, Tatyana
  • Härkönen, Jaakko
  • Mäenpää, Teppo H.
  • Luukka, Panja
  • Kassamakov, Ivan Vladislavov
  • Karadzhinova-Ferrer, Aneliya Georgieva
  • Peltola, Timo
Abstract

A technical maintenance break of LHC running to deliver after 2015 the maximum possible amount of beam collisions for the experiments has started in early 2013. The CMS experiment will undergo its first major hardware upgrade, named as Phase I, during the shut-down period (LS1). The innermostmeasurement unit of the CMS, the silicon pixel detector will be completely rebuild and accompanied with new readout electronics and cooling system capable to handle essentially higher amount of data foreseen after LS1. The number of channels, i.e pixels and related interconnections, will simultaneously be increased from current 64 million up to 125 million channels allowing significantly better tracking performance. The CMS Upgrade project of Helsinki Institute of Physics (HIP) is involved in Phase I by production, including quality assurance (QA), of notable fraction of pixel sensor modules to be installed into<br/>upgraded detector. The on-going activity is carried out in cooperation with Finnish company Advacam Oy. The flip-chip interconnection processing is taking place at Aalto-VTT Micronova facility. A bare pixel module consists of a sensor and 16 read-out CMOS circuits (ROC) that are flip-chip (FC) bonded with the sensor. Alltogether the module has about 67 thousand pixels. Processing of the bare modules consists of several metal thin film depositions, lithograph steps, silicon wafer thinning, etching, electrochemical metal growth, silicon wafer dicing and it is carried out in the class 10 clean room premises of Micronova<br/>facilit. The acceptable level of bad interconnections in the module is less than 0.1%, thus the QA during the different process steps is crucial. First, characterization of the pixel sensors is done by current-voltage (IV) testing with a probe station. The second important QA step follows after the FC bonding of the 16 readout chips. The FC bonded pixel module will be tested with an automated probe station equipped with appropriate data acquisition (DAQ) hardware and software in order to reveal possible bad interconnections. In a case a malfunctioning readout chip is found, it is possible to liftoff an individual chip, and to replace it with a new one without sacrificing the whole 16- chip module.<br/>We have successfully produced first pre-series of the bare pixel modules. Module test measurements revealed less than ten bad interconnections out of more than 350 000 pixels and better than 98%yield of read-out ASICs.

Topics
  • Deposition
  • impedance spectroscopy
  • phase
  • experiment
  • thin film
  • laser emission spectroscopy
  • Silicon
  • etching
  • hot isostatic pressing