693.932 PEOPLE
| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Durose, K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2016Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks
- 2014Improved electrical mobility in highly epitaxial La:BaSnO 3 films on SmScO 3 (110) substratescitations
- 2014Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates
- 2011Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
- 2008Ion implantation of the window and front contact layers and its effect on polycrystalline photovoltaic devices
- 2006Development of low temperature approaches to device quality cadmium sulfide: A novel geometry for solution growth of thin films and their characterization
- 2005Effect of CdCl2 activation on the impurity distribution in CdTe/CdS solar cell structurescitations
- 2005Effect of the purity of CdTe starting material on the impurity profile in CdTe/CdS solar cells structurescitations
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
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article
Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
Abstract
Three methods in semiconductor defect analysis are described with examples and appraisal of their capbilities; an electron beam induced current method (R-EBIC) is shown to determine the sense of band bending at grain boundaries in the CdTe-CdS system. Cathodoluminescence in the TEM has demonstrated a link between stacking faults and 3.26eV luminescence in GaN. Statistical analysis of spatial pattern appolied to 'v-pit' distributions in InGaN structures on sapphire demonstrates the pits to be correlatied on the scale of 60-120nm.