| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Durose, K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2016Maximizing the optical performance of planar CH3NH3PbI3 hybrid perovskite heterojunction stacks
- 2014Improved electrical mobility in highly epitaxial La:BaSnO 3 films on SmScO 3 (110) substratescitations
- 2014Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates
- 2011Impedance spectroscopy of thin-film CdTe/CdS solar cells under varied illuminationcitations
- 2008Ion implantation of the window and front contact layers and its effect on polycrystalline photovoltaic devices
- 2006Development of low temperature approaches to device quality cadmium sulfide: A novel geometry for solution growth of thin films and their characterization
- 2005Effect of CdCl2 activation on the impurity distribution in CdTe/CdS solar cell structurescitations
- 2005Effect of the purity of CdTe starting material on the impurity profile in CdTe/CdS solar cells structurescitations
- 2003Selected techniques for examining the electrical, optical and spatial properties of extended defects in semiconductors
- 2003Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
- 2003Combined TEM-CL investigation of inhomogeneities in GaN epilayers and InGaN quantum wells
Places of action
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article
Simultaneous TEM and cathodoluminescence imaging of non uniformity in in 0.1Ga 0.9N quantum wells
Abstract
Monochromatic cathodoluminescence (CL) imaging of metal-organic vapour phase epitaxy (MOVPE) grown In(0.1)Ga(0.9)N single quantum wells (QW) has been performed in a scanning transmission electron microscope (STEM). Spatially resolved fluctuations in the CL emission wavelength and intensity of the QW luminescence were recorded. The presence of regions with luminescent features asymmetrically distributed either side of the QW peak emission was inferred. These fluctuations may be attributed to, by for example, variations of ±0.01 in the In fraction of the In(0.1)Ga(0.9)N alloy, to changes of up to 0.6nm in the QW thickness. However these factors do not explain the gross fluctuations in QW emission intensity observed in TEM-CL on the scale of approximately one micron.