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Zhu, Yu
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Publications (6/6 displayed)
- 2011Atomic Layer Deposition of GeTe
- 2007Properties of ultrathin platinum deposited by atomic layer deposition for nanoscale copper-metallization schemescitations
- 2006Copper Electroplating on Zero-Thickness ALD Platinum for Nanoscale Computer Chip Interconnectscitations
- 2006Platinum Liner Deposited by Atomic Layer Deposition for Cu Interconnect Applicationcitations
- 2004Atomic layer deposition of tantalum nitride for ultrathin liner applications in advanced copper metallization schemescitations
- 2003Enhancement of Copper Wetting via Surfactant-Based Post-Treatment of Ultra-Thin Atomic Layer Deposited Tantalum Nitride Liners
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document
Atomic Layer Deposition of GeTe
Abstract
GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.