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Pore, Viljami
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Topics
Publications (8/8 displayed)
- 2011Atomic Layer Deposition of GeTe
- 2010Silver Coated Platinum Core–Shell Nanostructures on Etched Si Nanowires: Atomic Layer Deposition (ALD) Processing and Application in SERScitations
- 2009Atomic layer deposition of metal tellurides and selenides using alkylsilyl compounds of tellurium and seleniumcitations
- 2009Alkylsilyl compounds of selenium and tellurium
- 2009Explosive crystallization in atomic layer deposited mixed titanium oxidescitations
- 2007Atomic layer deposition in nanotechnology applications
- 2007Atomic layer deposition of titanium disulfide thin filmscitations
- 2006Atomic layer deposition and properties of lanthanum oxide and lanthanum-aluminum oxide filmscitations
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document
Atomic Layer Deposition of GeTe
Abstract
GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.