Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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693.932 PEOPLE
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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (3/3 displayed)

  • 2007Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflectorcitations
  • 2004Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectors3citations
  • 20030.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor laser101citations

Places of action

Chart of shared publication
Brown, C. T. A.
1 / 10 shared
Dawson, Md
3 / 39 shared
Calvez, S.
3 / 9 shared
Leburn, C. G.
1 / 1 shared
Mcrobbie, A. D.
1 / 1 shared
Lagatsky, A. A.
1 / 10 shared
Gupta, J. A.
1 / 3 shared
Aers, G. C.
1 / 1 shared
Sibbett, W.
1 / 11 shared
Valentine, G. J.
1 / 1 shared
Sun, H. D.
1 / 5 shared
Gundogdu, K.
1 / 1 shared
Hall, K. C.
1 / 1 shared
Macaluso, R.
1 / 5 shared
Pessa, M.
1 / 7 shared
Boggess, T. F.
1 / 1 shared
Jouhti, T.
1 / 2 shared
Ferguson, A. I.
1 / 1 shared
Jeon, C. W.
1 / 4 shared
Abram, R. H.
1 / 1 shared
Hastie, Jennifer E.
1 / 3 shared
Hopkins, J. M.
1 / 1 shared
Riis, Erling
1 / 1 shared
Chart of publication period
2007
2004
2003

Co-Authors (by relevance)

  • Brown, C. T. A.
  • Dawson, Md
  • Calvez, S.
  • Leburn, C. G.
  • Mcrobbie, A. D.
  • Lagatsky, A. A.
  • Gupta, J. A.
  • Aers, G. C.
  • Sibbett, W.
  • Valentine, G. J.
  • Sun, H. D.
  • Gundogdu, K.
  • Hall, K. C.
  • Macaluso, R.
  • Pessa, M.
  • Boggess, T. F.
  • Jouhti, T.
  • Ferguson, A. I.
  • Jeon, C. W.
  • Abram, R. H.
  • Hastie, Jennifer E.
  • Hopkins, J. M.
  • Riis, Erling
OrganizationsLocationPeople

document

Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector

  • Brown, C. T. A.
  • Dawson, Md
  • Calvez, S.
  • Leburn, C. G.
  • Mcrobbie, A. D.
  • Burns, D.
  • Lagatsky, A. A.
  • Gupta, J. A.
  • Aers, G. C.
  • Sibbett, W.
Abstract

THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.

Topics
  • impedance spectroscopy
  • surface
  • semiconductor
  • Nitrogen
  • Indium