693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dawson, Md
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (39/39 displayed)
- 2020Gallium nitride micro-light-emitting diode structured light sources for multi-modal optical wireless communications systemscitations
- 2020Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate
- 2020Gigabit per second visible light communication based on AlGaInP red micro-LED micro-transfer printed onto diamond and glasscitations
- 2020Automated nanoscale absolute accuracy alignment system for transfer printingcitations
- 2019Amplifying organic semiconductor waveguide based nanocrystal sensor
- 2019Hyperspectral imaging under low illumination with a single photon cameracitations
- 2019Gallium nitride micro-LED drive circuits for visible light communications
- 2017InGaN µLEDs integrated onto colloidal quantum dot functionalised ultra-thin glasscitations
- 2017Design, fabrication and application of GaN-based micro-LED arrays with individual addressing by n-electrodescitations
- 2017Gb/s visible light communications with colloidal quantum dot color converterscitations
- 2017InGaN µLEDs integrated onto colloidal quantum dot functionalized ultra-thin glass.
- 2013Highly-photostable and mechanically flexible all-organic semiconductor laserscitations
- 2012Colloidal quantum dot nanocomposites for visible wavelength conversion of modulated optical signalscitations
- 2010Amplified spontaneous emission in free-standing membranes incorporating star-shaped monodisperse π-conjugated truxene oligomerscitations
- 2010Tunable laser operation of a Tm3+-doped tellurite glass laser near 2 μm pumped by a 1211 nm semiconductor disk lasercitations
- 2009Free-standing light-emitting organic nanocomposite membranes
- 2009White light emission via cascade Förster energy transfer in (Ga, In)N quantum well/polymer blend hybrid structurescitations
- 2009Star-shaped oligofluorene nanostructured blend materialscitations
- 2009GaInNAs semiconductor disk lasers as pump sources for Tm3+ (,Ho3+ )-doped glass, crystal and fibre laserscitations
- 2009Hybrid GaN/organic microstructured light-emitting devices via ink-jet printingcitations
- 2008Integration by self-aligned writing of nanocrystal/epoxy composites on InGaN micropixelated light-emitting diodescitations
- 2008Light emitting polymer blends and diffractive optical elements in high-speed direct laser writing of microstructurescitations
- 2008Individually-addressable flip-chip AllnGaN micropixelated light emitting diode arrays with high continuous and nanosecond output powercitations
- 2007Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector
- 2006Hybrid inorganic/organic micro-structured light-emitting diodes produced by self-aligned direct writing
- 2006Microfabrication in free-standing gallium nitride using UV laser micromachiningcitations
- 2006Hybrid inorganic/organic semiconductor heterostructures with efficient non-radiative energy transfercitations
- 2006Wavelength-tunable and white light emission from polymer-converted micropixellated InGaN ultraviolet light-emitting diodescitations
- 2005Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applicationscitations
- 2004Effects of rapid thermal annealing on the optical properties of low-loss 1.3um GaInNAs/GaAs saturable bragg reflectorscitations
- 2004Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour lasercitations
- 2003Selective modification of band gap in GaInNAs/GaAs structures by quantum-well intermixingcitations
- 20030.5-W single transverse-mode operation of an 850-nm diode-pumped surface-emitting semiconductor lasercitations
- 2003Fabrication of matrix-addressable InGaN-based microdisplays of high array densitycitations
- 2003Characterization of selective quantum well intermixing in 1.3um GaInNAs/GaAs structurescitations
- 2003Quantum well intermixing in GaInNAs/GaAs structurescitations
- 2002GaN microcavities formed by laser lift-off and plasma etchingcitations
- 2001Femtosecond laser machining of gallium nitridecitations
- 2001InGaN/GaN quantum well microcavities formed by laser lift-off and plasma etching
Places of action
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document
Self-starting femtosecond Cr4+:YAG laser mode locked with a GaInNAs saturable Bragg reflector
Abstract
THE quaternary semiconductor system Ga In N As has been the subject of considerable recent interest. The ability to vary the nitrogen (N) and indium (In) concentrations permits the bandgap energy to be tailored for applications in the important 1200-1600 nm spectral region, via strong band-bowing, while controlling the lattice constant to permit pseudomorphic growth on a GaAs substrate [1]. GaInNAs is proven for light emission from vertical-cavity surface-emitting laser and vertical-external-cavity surface-emitting laser devices operating near 1300 nm [2]-[4], but it is also a potentially important material for developing saturable absorber devices. Of particular relevance are the saturable Bragg reflectors (SBRs) and semiconductor saturable absorbing mirrors for the passive mode-locking of near-infrared solid-state lasers operating in the 1200-1600 nm region.