| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Koinuma, H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2005Improved stoichiometry and misfit control in perovskite thin film formation at a critical fluence by pulsed laser depositioncitations
- 2004High-resolution synchrotron-radiation photoemission characterization for atomically-controlled SrTiO3(001) substrate surfaces subjected to various surface treatmentscitations
- 2004Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase Ti1−xCoxO2citations
- 2003A high-resolution synchrotron-radiation angle-resolved photoemission spectrometer with <i>in situ</i> oxide thin film growth capabilitycitations
- 2003Modeling and simulation of polycrystalline ZnO thin-film transistorscitations
- 2003Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layercitations
- 200345° rotational epitaxy of SrTiO3 thin films on sulfide-buffered Sicitations
- 2003Experimental investigation of ferromagnetism in II-VI disordered semiconducting compoundscitations
- 2003Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser depositioncitations
- 2002Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layerscitations
- 2002Vapor–liquid–solid tri-phase pulsed-laser epitaxy of RBa2Cu3O7−y single-crystal filmscitations
- 2002In-plane lattice constant tuning of an oxide substrate with Ba1−xSrxTiO3 and BaTiO3 buffer layerscitations
- 2002Systematic examination of carrier polarity in composition spread ZnO thin films codoped with Ga and Ncitations
- 2001Ferromagnetic interactions in p- and n-type II-VI diluted magnetic semiconductors
- 2001High-temperature goniometer for thin film growth and ion scattering studiescitations
- 2001Anatase TiO2 thin films grown on lattice-matched LaAlO3 substrate by laser molecular-beam epitaxycitations
- 2000In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
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article
In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire
Abstract
We have found that ZnO films consisting of epitaxially ordered arrays of closely packed hexagonal microcrystallites grown on vicinal (1000) sapphire exhibit biaxial in-plane optical anisotropy. The optical anisotropy resonance occurs near the band gap energy of ZnO. The line shape of the resonance is consistent with that induced by an in-plane anisotropic strain. The direction of the anisotropy coincides with the projection of the miscut direction of the (0001) sapphire substrates onto the sample surface plane. The magnitude of the anisotropy is generally larger for films with high crystalline quality, and on substrates with larger miscut angles. A possible origin of the strain anisotropy due to the miscut angle and the difference in thermal expansion rate of sapphire along its c and a axes is proposed. (C) 2000 American Institute of Physics. [S0021-8979(00)06217-4].