| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Murray, Gordon D.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (1/1 displayed)
Places of action
| Organizations | Location | People |
|---|
document
Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures
Abstract
This paper reports the application of test structures <br/>to the evaluation of tantalum nitride (Ta-N) as a material for <br/>integration with high temperature electronics. The test structure <br/>fabrication involves the reactive sputtering of Ta-N and its <br/>consequent annealing in a vacuum to reach the target <br/>specifications of low temperature coefficient of resistance (TCR). <br/>A test wafer has been designed to both evaluate the temperature <br/>performance of thin films and to study the possibility of <br/>integrating different metal films into a single sensing device. The <br/>Ta-N resistors resulting from this work have a TCR of <br/>–150 ppm/°C, which remains stable after 6 hours of annealing at <br/>600 °C.