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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Cummins, Gerard
University of Birmingham
in Cooperation with on an Cooperation-Score of 37%
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Publications (7/7 displayed)
- 2019Miniaturized 3-D Cross-Type Receiver for Wirelessly Powered Capsule Endoscopycitations
- 2018Nanocomposite-Based Microstructured Piezoresistive Pressure Sensors for Low-Pressure Measurement Rangecitations
- 2016Progress towards a multi-modal capsule endoscopy device featuring microultrasound imagingcitations
- 2016Carbon screen-printed electrodes on ceramic substrates for label-free molecular detection of antibiotic resistancecitations
- 2015Electrodeposited magnetostrictive Fe-Ga alloys for miniaturised actuatorscitations
- 2014Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures
- 2014Statistical analysis of stencil technology for wafer-level bumpingcitations
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document
Characterization and Development of Materials for an Integrated High-Temperature Sensor Using Resistive Test Structures
Abstract
This paper reports the application of test structures <br/>to the evaluation of tantalum nitride (Ta-N) as a material for <br/>integration with high temperature electronics. The test structure <br/>fabrication involves the reactive sputtering of Ta-N and its <br/>consequent annealing in a vacuum to reach the target <br/>specifications of low temperature coefficient of resistance (TCR). <br/>A test wafer has been designed to both evaluate the temperature <br/>performance of thin films and to study the possibility of <br/>integrating different metal films into a single sensing device. The <br/>Ta-N resistors resulting from this work have a TCR of <br/>–150 ppm/°C, which remains stable after 6 hours of annealing at <br/>600 °C.