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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ganguli, Somesh Chandra
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2020Correlating structural, electronic, and magnetic properties of epitaxial VSe2 thin filmscitations
- 2018A Versatile UHV Molecular Beam Epitaxy for High-purity Thin Film Growth
- 2013A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystalscitations
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document
A Versatile UHV Molecular Beam Epitaxy for High-purity Thin Film Growth
Abstract
Molecular beam epitaxy (MBE) has long been at the forefront of high quality thin film growth. Here we describe the design and construction of a universal MBE system with the capability of thin film growth on various sample holders that are currently used in experimental set ups such as angle-resolved photoemission spectroscopy (ARPES), electron energy loss spectroscopy (EELS) and scanning tunneling microscopy (STM). The MBE has seven effusion cells (High-T, low-T and standard) and electron beam evaporators for evaporating a host of different materials (Ti, Se, Bi, Sb, Mo, Nb etc). This universal MBE system uses a sample holder-holder to accommodate different sample holders. After deposition, the sample holder-holder can be unloaded via a vacuum shuttle for in-situ transfer to the respective systems. We will describe the growth and characterization of dichalcogenides on a variety of substrates using this MBE system.