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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Jafari, Homayoun
University of Groningen
in Cooperation with on an Cooperation-Score of 37%
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Publications (3/3 displayed)
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thesis
Transition Metal Dichalcogenides for Ferroelectric Spintronics
Abstract
Recent discoveries in two-dimensional (2D) transition metal dichalcogenides (TMDs), have opened up exciting new possibilities for next-generation electronics. These materials exhibit unique ferroelectric properties, allowing for the precise control of electronic states at the atomic scale. This makes them highly promising for ultra-low-power, high-density memory and logic devices.<br/> One exciting application involves using TMDs in ferroelectric spin-orbit (FESO) devices, a new type of spintronic technology that could replace traditional magnetoelectric components. FESO devices store information using ferroelectric polarization, which can be read via the charge-to-spin conversion (CSC) mechanism. This simplifies the design by eliminating the need for a separate magnetoelectric writing unit.<br/> <br/> This research focuses on analyzing the spin textures of nonmagnetic bulk and bilayer ferroelectric TMDs to better understand their potential for CSC. By studying the Rashba-Edelstein effect in these materials, the thesis demonstrates how sliding layers of MX$_{2}$ (M = W, Mo; X = S, Se, Te) produce ferroelectric states that align well with experimental data. These simulations show strong spin-orbit coupling and reveal considerable CSC rates, which are crucial for efficient data storage and processing.<br/> The findings could lead to more advanced, energy-efficient electronics with faster data processing capabilities.