| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Seibt, Michael
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Relationship between structure and charge/orbital order in epitaxial single layer Ruddlesden–Popper manganite thin filmscitations
- 2024Scaling Behavior in the Spectral and Power Density Dependent Photovoltaic Response of Hot Polaronic Heterojunctions
- 2023Composition and electronic structure of $${rm SiO}_{rm x}$$/$${rm TiO}_{rm y}$$/Al passivating carrier selective contacts on n-type silicon solar cellscitations
- 2023Composition and electronic structure of SiOx/TiOy/Al passivating carrier selective contacts on n-type silicon solar cells
- 2023Composition and electronic structure of ${rm SiO}_{rm x}$/${rm TiO}_{rm y}$/Al passivating carrier selective contacts on n-type silicon solar cellscitations
- 2023Interface-Assisted Room-Temperature Magnetoresistance in Cu-Phenalenyl-Based Magnetic Tunnel Junctionscitations
- 2021Tracing the Boron Diffusion into a Textured Silicon Solar Cell by Combining Boron Diffusion Simulation with Experimental and Simulated Scanning Transmission Electron Beam Induced Current
- 2021Phase Transitions in a Perovskite Thin Film Studied by Environmental In Situ Heating Nano‐Beam Electron Diffractioncitations
- 2020Room-Temperature Hot-Polaron Photovoltaics in the Charge-Ordered State of a Layered Perovskite Oxide Heterojunctioncitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Preparation Techniques for Cross‐Section Transmission Electron Microscopy Lamellas Suitable for Investigating In Situ Silicon–Aluminum Alloying at Grain Boundaries in Multicrystalline Siliconcitations
- 2016Ferroelectric origin in one-dimensional undoped ZnO towards high electromechanical responsecitations
- 2015Current-voltage characteristics of manganite-titanite perovskite junctionscitations
Places of action
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document
(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
Abstract
Hyperdoping of semiconductors can be used to shift the optical band gap towards lower energies and thereby extend the optical response of a material like Si further into the infrared. This makes the approach attractive for opto-electronic applications, e.g. photodiodes or intermediate band solar cells. Here, we study the hyperdoping of Si with sulfur that we obtain by placing the Si substrate in a sulfur containing atmosphere and subsequent irradiation by a multitude of ultrashort laser pulses. We present an overview of our key findings regarding the so obtained material system and elaborate on remaining challenges and promising perspectives.<br/><br/>We evaluate the correlation of laser process parameters like effective pulse density, laser fluence and pulse duration as well as different and customized post-hyperdoping treatments on structural, optical, and electrical material properties. The structural properties are studied by transmission electron microscopy and Raman spectroscopy, optical properties by absorptance measurements and electrical properties by the effective minority carrier lifetime and current-voltage (I-V) measurements. In case of the carrier lifetime, we apply an Al2O3 surface passivation by atomic layer deposition (ALD) to reduce the surface recombination rate and, thus, to become more sensitive to changes within the hyperdoped bulk. For I-V measurements, we deposit ohmic metal contacts. Challenges for both surface passivation and metallization that result from the surface roughness of the material are discussed. We furthermore implement the material into a photodetector device and characterize its performance in the sub-bandgap spectral region up to 5µm.