| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Radfar, Behrad
Aalto University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
- 2024Development of a Selective Wet-Chemical Etchant for Precise 3D Sculpting of Silicon Enabled by Infrared Non-Linear Laser Modificationcitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Impact of post-ion implantation annealing on Se-hyperdoped Gecitations
- 2024Bridging the gap between surface physics and photonicscitations
- 2023(oral talk) Effective carrier lifetime in ultrashort pulse laser hyperdoped silicon: dopant concentration dependence and practical upper limits
- 2023Excellent Responsivity and Low Dark Current Obtained with Metal-Assisted Chemical Etched Si Photodiodecitations
- 2022Perspectives on Black Silicon in Semiconductor Manufacturing: Experimental Comparison of Plasma Etching, MACE and Fs-Laser Etchingcitations
- 2022Millisecond-Level Minority Carrier Lifetime in Femtosecond Laser-Textured Black Siliconcitations
Places of action
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document
(invited talk) Sulfur-hyperdoped silicon by ultrashort laser processing
Abstract
Hyperdoping of semiconductors can be used to shift the optical band gap towards lower energies and thereby extend the optical response of a material like Si further into the infrared. This makes the approach attractive for opto-electronic applications, e.g. photodiodes or intermediate band solar cells. Here, we study the hyperdoping of Si with sulfur that we obtain by placing the Si substrate in a sulfur containing atmosphere and subsequent irradiation by a multitude of ultrashort laser pulses. We present an overview of our key findings regarding the so obtained material system and elaborate on remaining challenges and promising perspectives.<br/><br/>We evaluate the correlation of laser process parameters like effective pulse density, laser fluence and pulse duration as well as different and customized post-hyperdoping treatments on structural, optical, and electrical material properties. The structural properties are studied by transmission electron microscopy and Raman spectroscopy, optical properties by absorptance measurements and electrical properties by the effective minority carrier lifetime and current-voltage (I-V) measurements. In case of the carrier lifetime, we apply an Al2O3 surface passivation by atomic layer deposition (ALD) to reduce the surface recombination rate and, thus, to become more sensitive to changes within the hyperdoped bulk. For I-V measurements, we deposit ohmic metal contacts. Challenges for both surface passivation and metallization that result from the surface roughness of the material are discussed. We furthermore implement the material into a photodetector device and characterize its performance in the sub-bandgap spectral region up to 5µm.