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Klee, M.
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Publications (4/4 displayed)
- 2010BaxSr1-xTi1.02O3 metal-insulator-metal capacitors on planarized alumina substratescitations
- 2008The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates
- 2007Separation of intrinsic dielectric and resistive electrode losses in ferroelectric capacitors at radio frequencies
- 2006Electrical characterization of thin film ferroelectric capacitors
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document
Electrical characterization of thin film ferroelectric capacitors
Abstract
Tunable capacitors can be used to facilitate the reduction of components in wireless technologies. The tunability of the capacitors is caused by the sensitivity of the relative dielectric constant to a change in polarization with electric field. Thin film ferroelectric MIM capacitors on silicon offer a re-use of electronic circuitry, low tuning voltages, a high capacitance density, a low cost, a presence of bulk acoustic wave resonance(s) and decoupling functionality. The basic operation and measurement principles are outlined. To assess the performance in the microwave frequency range, MIM test structures1, with a barium strontium titanate dielectric, have been successfully processed, and measured. The electrical characterization of tunable capacitors is demonstrated using a 1-Port Advantest R3767CG VNA in the frequency range of 10 MHz – 8 GHz.