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| Azevedo, Nuno Monteiro |
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Schorr, S.
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Publications (5/5 displayed)
- 2024Wet-prepared thin films of Cu2MnSnS4: structural study and photovoltaic performances
- 2020Synthesis, theoretical and experimental characterisation of thin film Cu2Sn1-xGexS3 ternary alloys (x=0 to 1): Homogeneous intermixing of k for Sn and Gecitations
- 2019The Effect of Copper Vacancies on the Anion Position of Chalcopyrite Type CuGaS2citations
- 2016The influence of sodium on the point defect characteristics in off stoichiometric CuInSe2citations
- 2012AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties.
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article
AgGaSe2 thin films grown by chemical close-spaced vapor transport for photovoltaic applications: structural, compositional and optical properties.
Abstract
Thin films of chalcopyrite AgGaSe(2) have been successfully grown on glass and glass/molybdenum substrates using the technique of chemical close-spaced vapor transport. The high crystallinity of the samples is confirmed by grazing-incidence x-ray diffraction, scanning and transmission electron microscopy, and optical transmission/reflection spectroscopy. Here, two of the three expected direct optical bandgaps are found at 1.77(2) and 1.88(6) eV at 300 K. The lowest bandgap energy at 4 K is estimated to be 1.82(3) eV. Photoluminescence spectroscopy has further revealed the nature of the point defects within the AgGaSe(2), showing evidence for the existence of very shallow acceptor levels of 5(1) and 10(1) meV, and thus suggesting the AgGaSe(2) phase itself to exhibit a p-type conductivity. At the same time, electrical characterization by Hall, Seebeck and four-point-probe measurements indicate properties of a compensated semiconductor. The electrical properties of the investigated thin films are mainly influenced by the presence of Ag(2)Se and Ga(2)O(3) nanometer-scaled surface layers, as well as by Ag(2)Se inclusions in the bulk and Ag clusters at the layers' rear side.