Materials Map

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

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Publications (1/1 displayed)

  • 2022Optimisation of the Thermoelectric Properties of Fe2VAl Thin Films Obtained by Co-sputteringcitations

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Idrissi, Hosni
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Kashiwar, Ankush
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Jacques, Pascal, J.
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2022

Co-Authors (by relevance)

  • Idrissi, Hosni
  • Kashiwar, Ankush
  • Jacques, Pascal, J.
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document

Optimisation of the Thermoelectric Properties of Fe2VAl Thin Films Obtained by Co-sputtering

  • Idrissi, Hosni
  • Kashiwar, Ankush
  • Jacques, Pascal, J.
  • Roy, Geoffrey
Abstract

Optimisation of the thermoelectric properties of Fe2VAl thin films obtained by co-sputtering G. Roy, KM Karuppasamy , V. Dupont, J.F. Trelcat, A. Kashiwar, C. van der Rest, H. Idrissi, JP. Erauw, P. Guaino, P.J. Jacques The Fe2VAl Heusler compound is attracting increasing interest from the scientific community due to its excellent performance in terms of power factor [1-2] around room temperature, coupled with the high availability and non-toxicity of its constitutive elements. Thermoelectric thin films are of interest from a fundamental point of view, especially owing to the possibilities of nano-structuring, but also from an application point of view where it could facilitate the integration of thermoelectric modules for powering low power electronic devices such as autonomous sensors. Nevertheless, studies on Fe2VAl thin films are relatively scarce and some recent results still raise some questions [3-4]. In this study, Fe2VAl thin films were processed by a co-sputtering method allowing to easily control the stoichiometry of the films. After process optimisation, p- and n-type layers have been obtained with power factors of 0.8 and 1.6 10-3W/mK², respectively. In addition, we determined using advanced microstructure analysis that the increase of thermoelectric performances is related to crystal ordering during annealing. [1] Miyazaki, H. et al. "Thermoelectric properties of Heusler-type off-stoichiometric Fe2V1+ xAl1− x alloys." Materials Research Express 1.1 (2013): 015901. [2] Garmroudi, F., et al. "Boosting the thermoelectric performance of Fe 2 VAl− type Heusler compounds by band engineering." Physical Review B 103.8 (2021): 085202. [3] Hinterleitner, B., et al. "Thermoelectric performance of a metastable thin-film Heusler alloy." Nature 576.7785 (2019): 85-90. [4] Alleno, E., et al. "On the structure and electronic properties of Fe 2 V 0.8 W 0.2 Al thin films." Physical Chemistry Chemical Physics 22.39 (2020): 22549-22554.

Topics
  • impedance spectroscopy
  • compound
  • thin film
  • annealing
  • toxicity