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Buda, M.
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Topics
Publications (9/9 displayed)
- 2017The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
- 2008Self-sustained output power pulsations in InGaAs quantum dot ridge-waveguide laserscitations
- 2007Modeling and characterization of InAsGaAs quantum dot lasers grown using metal organic chemical vapor depositioncitations
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2006Effect of rapid thermal annealing on the atomic intermixing of Zn- and C-doped InGaAs/AlGaAs quantum well laser structurescitations
- 2004Characteristics of MOCVD-Grown thin p-clad InGaAs quantum-dot laserscitations
- 2003Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetectorcitations
- 2003Low loss, thin p-clad 980-nm InGaAs semiconductor laser diodes with an asymmetric structure designcitations
- 2003Improvement of the Kink-Free Operation in Ridge-Waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridgecitations
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article
The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diodes
Abstract
<p>The effect of rapid thermal annealing to device performance of InGaAs/AlGaAs quantum well laser diode has been investigated using photoluminescence (PL), double-crystal X-ray diffraction (DCXRD), photo-response (PR) and lasing characteristic. X-ray measurement results show that there is an incorporation of carbon atom in lattice site of higly doped p++ GaAs contact layer. The photocurrent spectra at room temperature reveal that the relative intensity of 1e-1hh transition of annealed samples is much higher than that of as-grown samples and the peak became narrow. Stark shifts are much higher for the samples after annealing in comparison to the as-grown samples and this has been attributed to a decrease of the confining potential due to thermal interdiffusion. Characteristic of laser diodes shows that there is no significant degradation of lasing parameters after annealing has been observed and it has been found that the threshold current of annealed laser diodes are approximately four times less than as-grown laser diodes and this has been attributed to the electrical activation of carbon.</p>