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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ederer, Manuel
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document
STEM exploration of 2DEG at TiO2/LaAlO3 interface
Abstract
In recent years, a lot of research has been performed on transition metal oxides, because of<br/>their fascinating behaviour at heterostructural interfaces. Arising phenomena, like the<br/>formation of two-dimensional electron gas (2DEG) with high charge densities make such<br/>systems interesting for potential technical applications. The physical origins of the 2DEG are<br/>still highly discussed and are often attributed to polar discontinuity at the interface or oxygen<br/>vacancies. However, a fully characterization and understanding of the oxide interfaces is<br/>unavoidable to apply them reliable at electronic devices and be able to tune their electric<br/>properties. A 2DEG with promising electric properties is also present at the interface of<br/>anatase TiO2 and lanthanum aluminate LaAlO3, which we will investigate in this work. The<br/>lattice mismatch of these crystals is only around 0.2 %, enabling the fabrication of atomic<br/>sharp interfaces (Fig. 1 (a)). We utilize scanning transmission electron microscopy (STEM)<br/>and electron energy loss spectroscopy (EELS) to map directly individual electronic states,<br/>which are located at the Fermi-level and responsible for the 2DEG, by using very narrow<br/>integration windows in front of the oxygen core-losses. The experiments are supported by<br/>density functional theory (DFT) calculation and multislice simulation. The good agreement<br/>between experiments and<br/>defect-free simulation<br/>indicates that the 2DEG is<br/>already formed by electronic<br/>reconstruction (Fig. 1 (b)).<br/>Nevertheless, STEM-EELS<br/>reveals further accumulation<br/>of oxygen vacancies (Fig. 1<br/>(c)). The direct mapping of<br/>such an electron gas opens<br/>up entirely new ways of<br/>investigating<br/>heterostructures in<br/>electronics. Combined with<br/>DPC experiments, we are a<br/>step closer to a fully<br/>characterization of complex<br/>oxide heterostructures.