| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Shepherd, David P.
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2018Yb-doped mixed sesquioxide thin films grown by pulsed laser depositioncitations
- 2018Towards high-power on-chip GHz frequency combs
- 2017Tailoring the refractive index of films during pulsed laser deposition growth
- 2017Pulsed laser deposition of garnets at a growth rate of 20-microns per hour
- 2016Laser performance of Yb-doped-garnet thin films grown by pulsed laser deposition
- 2016PLD growth of complex waveguide structures for applications in thin-film lasers: a 25 year retrospective
- 2016Engineered crystal layers grown by pulsed laser deposition: making bespoke planar gain-media devices
- 2016Pulsed laser deposited crystalline optical waveguides for thin-film lasing devices
- 2015Graphene Q-switched mode-locked and Q-switched ion-exchanged waveguide laserscitations
- 2015Pulsed laser-assisted fabrication of laser gain media
- 2015Towards fabrication of 10 W class planar waveguide lasers: analysis of crystalline sesquioxide layers fabricated via pulsed laser deposition
- 2014Near-infrared, mode-locked waveguide lasers with multi-GHz repetition rates
- 2014Pulsed laser deposition of thin films for optical and lasing waveguides (including tricks, tips and techniques to maximize the chances of growing what you actually want)
- 2014Graphene q-switched Yb: phosphate glass channel waveguide laser
- 2012Passively mode-locked diode-pumped monolithic channel waveguide laser with a repetition rate of 4.9 GHz
- 2008Current state-of-the-art of pulsed laser deposition of optical waveguide structures: existing capabilities and future trendscitations
- 2006Optical waveguide growth and applications
- 2004Laser operation of a low loss (0.1dB/cm) Nd:Gd3Ga5O12 thick (40 micron) planar waveguide grown by pulsed laser depositioncitations
- 2004Channel waveguide lasers in a lead silicate glass fashioned using the extrusion techniquecitations
- 2003Gain measurements at 2.8µm and fluorescence spectroscopy in Er:LaF3 waveguides fabricated by molecular beam epitaxy
- 2003Three-dimensional structuring of sapphire by sequential He+ ion-beam implantation and wet chemical etchingcitations
- 2002Laser-assisted microstructuring for Ti:sapphire channel-waveguide fabrication
- 2002Synchronously pumped optical parametric oscillator driven by a femtosecond mode-locked fibre lasercitations
- 2002Laser performance and spectroscopic analysis of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glasscitations
Places of action
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document
Pulsed laser deposited crystalline optical waveguides for thin-film lasing devices
Abstract
We have used the technique of pulsed laser deposition (PLD) to grow doped crystalline films of garnets (YAG) and sesquioxdes (Y<sub>2</sub>O<sub>3</sub>, Sc<sub>2</sub>O<sub>3</sub>, and Lu<sub>2</sub>O<sub>3</sub>) for application as optically-pumped waveguide lasers. For the sesquioxides in particular, PLD offers a real advantage in terms of the ~1100K growth temperature required to grow crystalline thin films in comparison to ~2750K required to grow bulk crystals. We can grow these materials at the rate of ~4 µm per hour, on cheap and readily available single-crystal YAG substrates, which allows rapid production of waveguide samples of the ~10-20 µm thickness required for efficient pumping via high-power diode lasers.<br/><br/>The sesquioxide films grow preferentially in the (222) crystal orientation, and although there is an excellent lattice match to the (100) oriented YAG substrates, the four-fold symmetry associated with the (222) growth direction can lead to the presence of domain boundary problems that contribute to an undesirable optical loss within these waveguide hosts. In contrast the garnet hosts experience ideal epitaxial growth (i.e. YAG films grown on YAG substrates) where the presence of the dopant lasing ion produces the necessary refractive index requirement for waveguide operation.<br/><br/>We will discuss the range of lasing results we have achieved so far, which includes c.w. lasing within single waveguide films, capped layers and multilayer structures where the doped lasing layer has been grown within a 3-layer sandwich structure [1,2]. We will also describe results where a single layer of graphene has been deposited on either the output coupler mirror, or on the top surface of the guide, to produce pulsed laser output in q-switched mode [3-4]. Since these lasing waveguides are optically pumped by diode lasers, it is important to design these guiding structures to ensure efficient operation in terms of low threshold and high slope efficiency. Details will be given on optimum waveguide design as well as our strategy on further reduction of optical propagation losses.