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| Naji, M. |
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| Motta, Antonella |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Rignanese, Gian-Marco |
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Coleman, V. A.
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Publications (5/5 displayed)
- 2009Thermal quenching of photoluminescence in ZnO/ZnMgO multiple quantum wells following oxygen implantation and rapid thermal annealingcitations
- 2007Temperature dependent photoluminescence in oxygen ion implanted and rapid thermally annealed ZnOZnMgO multiple quantum wellscitations
- 2007A comparison of the mechanical properties and the impact of contact induced damage in a- and c- axis ZnO single crystals
- 2006Observation of blue shifts in ZnO/ZnMgO multiple quantum well structures by ion-implantation induced intermixingcitations
- 2002Atomic relocation of fast diffusers in impurity-free disordered p-type GaAs
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document
A comparison of the mechanical properties and the impact of contact induced damage in a- and c- axis ZnO single crystals
Abstract
<p>Nanoindentation studies were conducted on a-axis oriented ZnO single crystals. The mechanical properties and deformation mechanisms were monitored and compared to previously determined data from c-axis material. Hardness and modulus values reveal that a-axis ZnO is significantly softer than c-axis material (hardness of 2 ± 0.2 GPa), and behaves more plastically. Additionally, the influence of contact induced damage on the defect structure of a-axis material was examined using cathodoluminescence spectroscopy and monochromatic imaging to monitor the luminescence from indent sites. Deformation directly under the indent site enhanced the occurrence of red luminescence, and was attributed to a native defect in ZnO that has a higher formation energy than the defects responsible for the green and yellow visible defect bands, which were present in ZnO during growth and clustered to the indent site during annealing.</p>