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| Naji, M. |
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| Petrov, R. H. | Madrid |
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| Kočí, Jan | Prague |
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| Ali, M. A. |
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| Azevedo, Nuno Monteiro |
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Szczepański, Zbigniew
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Publications (4/4 displayed)
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
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document
Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
Abstract
In this paper, we present the realization of assembly of SiC samples to DBC substrate (Direct Bonding Copper Substrate with 200 µm Gu metallization Au covered] by low-temperature sintering of micro scale Ag powder. In the preliminary experiments DBC test samples size 3 × 3 mm (in place of SiC die) were assembled to DBC substrate size 10 × 10 mm using following methods: a) sintering by Ag powder with Ag microparticles in air by applying temperature and pressure, b) sintering by Ag powder with Ag microparticles using temperature, pressure and high vacuum. Methods "a" and "b" permit to obtain very good adhesion range 8...10 MPa after sintering. However after ageing test at temperature 350°C in air the adhesion fall down dramatically. By increasing sintering temperature up to 500...550°C and sintering in vacuum range 1.3 Pa the adhesion is satisfactory. The results of these experiments will be presented in paper.