| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Kisiel, Ryszard
Warsaw University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Influence of Ag particle shape on mechanical and thermal properties of TIM jointscitations
- 2022Pressureless Direct Bonding of Au Metallized Substrate with Si Chips by Micro-Ag Particlescitations
- 2020Development of Assembly Techniques for Connection of AlGaN/GaN/Si Chips to DBC substratecitations
- 2019Development of SLID Bonding Technology for GaN Assembly Based on Ag Microflakescitations
- 2019Electrical properties of vertical GaN Schottky diodes on Ammono-GaN substratecitations
- 2018Solid-Liquid Interdiffusion Bonding Based on Au-Sn Intermetallic for High Temperature Applicationscitations
- 2017Combination of Solid-Liquid Interdiffusion and Sintering Bonding for GaN Devices Assemblycitations
- 2017Fluxless Pressure Ag Sintering in Creation of Au-Ag Connection Systems
- 2016Challenges in packaging of IR detectors – technology of elastic electrical connectionscitations
- 2016Die attach by diffusion Sn-Ag-Sn soldering in high temperature electronics applicationscitations
- 2016Application of Direct Bonded Copper Substrates for Prototyping of Power Electronic Modulescitations
- 2015Challenges in packaging of IR detectors – technology of elastic electrical connections
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Thermal characteristics of SiC diode assembly to ceramic substratecitations
- 2011Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
- 2011Mechanisms of carriers transport in Ni/n-SiC, Ti/n-SiC ohmic contactscitations
- 2010Overview of Materials and Bonding Techniques for Inner Connections in SiC High Power and High Temperature Applicationscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part I: Wettability Studiescitations
- 2004(Sn-Ag)eut Cu Soldering Materials, Part II
Places of action
| Organizations | Location | People |
|---|
document
Mechanical and Thermal Properties of SiC – Ceramics Substrate Interface
Abstract
In this paper, we present the realization of assembly of SiC samples to DBC substrate (Direct Bonding Copper Substrate with 200 µm Gu metallization Au covered] by low-temperature sintering of micro scale Ag powder. In the preliminary experiments DBC test samples size 3 × 3 mm (in place of SiC die) were assembled to DBC substrate size 10 × 10 mm using following methods: a) sintering by Ag powder with Ag microparticles in air by applying temperature and pressure, b) sintering by Ag powder with Ag microparticles using temperature, pressure and high vacuum. Methods "a" and "b" permit to obtain very good adhesion range 8...10 MPa after sintering. However after ageing test at temperature 350°C in air the adhesion fall down dramatically. By increasing sintering temperature up to 500...550°C and sintering in vacuum range 1.3 Pa the adhesion is satisfactory. The results of these experiments will be presented in paper.