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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kwietniewski, Norbert
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2022Performance of nanoimprinted and nanocoated optical label-free biosensor - nanocoating properties perspectivecitations
- 2021TiAl-based Ohmic Contacts to p-type 4H-SiC
- 2020Ti and TiAl-based ohmic contacts to 4H-SiCcitations
- 2018Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structurescitations
- 2017Effects of ultra-shallow ion implantation from RF plasma onto electrical properties of 4H-SiC MIS structures with SiOx/HfOx and SiOxNy/HfOx double-gate dielectric stackscitations
- 2016Electrical characterization of ZnO/4H-SiC n–p heterojunction diodecitations
- 2016Properties of silicon nitride thin overlays deposited on optical fibers – effect of fiber suspension in radio frequency plasma-enhanced chemical vapor deposition reactorcitations
- 2014Materials and Technological Aspects of High-Temperature SiC Package Reliability
- 2014Effect of Sample Elevation in Radio Frequency Plasma Enhanced Chemical Vapor Deposition (RF PECVD) Reactor on Optical Properties and Deposition Rate of Silicon Nitride Thin Filmscitations
- 2013Reactive impulse plasma ablation deposited barium titanate thin films on siliconcitations
- 2011Electronic properties of BaTiO<sub>3</sub>/4H-SiC interfacecitations
- 2010Measurements of Planar Metal -Dielectric Structures Using Split-Post Dielectric Resonatorscitations
- 2009Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devicescitations
- 2008Application of ZnO to passivate the GaN-based device structures
- 2007Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF<inf>4</inf> mixture gas mixing ratiocitations
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document
Materials and Technological Aspects of High-Temperature SiC Package Reliability
Abstract
The paper deals with materials and technological aspects of SiC diodes assembly into ceramic packages. Such diodes can reliably work at temperatures up to 350 oC. The ceramic package consists with DBC substrate electoplated by Ni/Au layers to which SiC diode was assembled by Ag sintering proces. Ag sintering proces. Ag micropaticles size of a few micrometer and a glake shape of the particles were used as attach material. Al. or Au wire bonding was used for creation of electrical connections inside ceramic package. Full encapsulation was achieved by using glass sealing of the ceramic package. The long term stability of electical parameters of SiC diodes at temperaturę 350oC was investigeted. It was shown that Schottky and PIN SiC diodes assembled into ceramic package by applying proposed materials and assembly technology keep their I-V characteristics unchangeable during ageing 350oC&400 h, and the package does not lose their tightness.