| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Crunteanu, Aurelian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2022Structural and electrical properties of high-performance vanadium dioxide thin layers obtained by reactive magnetron sputteringcitations
- 2022High-quality deposition of vanadium dioxide (VO2) films using magnetron sputtering
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2019Texture and interface characterization of iridium thin films grown on MgO substrates with different orientationscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2017Raman and XPS characterization of vanadium oxide thin films with temperaturecitations
- 2017Raman and XPS characterization of vanadium oxide thin films with temperaturecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Role of thermal strain in the metal-insulator and structural phase transition of epitaxial VO2 filmscitations
- 2016Microwave dielectric properties of pure and Mn-doped lead-free Na0.5Bi0.5TiO3 epitaxial thin films grown on (001) LaAlO3 single crystals using pulsed laser deposition
- 2016Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel techniquecitations
- 2016A study on controllable aluminum doped zinc oxide patterning by chemical etching for MEMS applicationcitations
- 2016Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmospherecitations
- 2016BST thin film capacitors integrated within a frequency tunable antenna
- 2015Strain and thickness dependence of the metal-insulator transition in VO2 epitaxial films
- 2015Electric field-assisted metal insulator transition in vanadium dioxide (VO2) thin films: optical switching behavior and anomalous far-infrared emissivity variationcitations
- 2015Lasing effects in new Nd3+-doped TeO2–Nb2O5–WO3 bulk glasses
- 2015Lasing effects in new Nd3+-doped TeO2–Nb2O5–WO3 bulk glasses
- 2015AlN, ZnO thin films and AlN/ ZnO or ZnO/AlN multilayer structures deposited by PLD for surface acoustic wave devicescitations
- 2012Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser depositioncitations
- 2012Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric propertiescitations
- 2012Structural, electrical and optical properties of thermochromic VO2 thin films obtained by reactive electron beam evaporationcitations
- 2010Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin filmscitations
- 2010Sub-hundred nanosecond electrostatic actuated RF MEMS switched capacitorscitations
- 2010A 380-420 MHz Two Pole tunable filter using new ferroelectric composite capacitors
- 2008RF microwave switches based on reversible metal semiconductor transition properties of VO2 thin films : an attractive way to realise simple RF microelectronic devicescitations
- 2007Electrical conduction mechanisms of metal nanoclusters embedded in an amorphous Al2O3 matrixcitations
- 2005Optical and electrical properties of metal nanoclusters embedded in a dielectric medium
Places of action
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conferencepaper
High-quality deposition of vanadium dioxide (VO2) films using magnetron sputtering
Abstract
Vanadium dioxide (VO2) has attracted an increased attention due to its ability to undergo a reversible metal to insulator transition (MIT) which can be thermally induced at a temperature of 340K or, more interesting, via optical or electrical excitations. The MIT is inducing drastic changes in the material's optical and electrical properties which have made VO2 an interesting material for integration in different electrical and optical devices (high-speed optical and electrical switches, field-effect transistors, oscillators…). The electrical and optical performances of the obtained films are strongly correlated with the quality, grain size, degree of strain and oxidation of the material. Thus, in order to better control the electrical resistivity or optical transmission changes during MIT (hysteresis and transition width, transition temperature), a good understanding of the film's growth mechanism is needed. We have investigated the structural, morphological and electrical characteristics of VO2 thin films obtained by DC magnetron sputtering of a vanadium target in Ar/O2 atmosphere, on large area substrates, up to 3". We examined the impact of the deposition and post-deposition annealing parameters on the structural and electrical properties of VO2 coatings. The films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Raman spectroscopy and electrical resistivity measurements. These combined analysis results indicate that the deposition and annealing temperatures along with the oxygen partial pressure are the most important parameters in order to achieve mono oriented VO2 films with state-of-the-art amplitude resistivity changes between the two states (superior to 5 orders of magnitude).