• Arshad, Mohd Khairuddin Md
• Lee, Yeng Seng
• Rahim, Ruslinda A.
• Rojan, Mohd Afendi Bin
• Gopinath, Subash C. B.
• Parmin, Nor Azizah
• Teh, Pei Leng
• Voon, Chun Hong
• Lim, Bee Ying
• Hashim, Uda

Abstract

Silicon carbide (SiC) is well known for their outstanding microwave absorbing properties. SiC nanomaterials (SiCNMs) are expected to have better microwave absorption performance due to their high specific surface area. To date, no study was reported to compare the dielectric properties and microwave absorbing properties of different type of SiCNMs. Therefore, the objective of this paper is to compare the dielectric properties and microwave absorption properties of different types of SiCNMs. In this paper, SiC nanoparticles (SiCNPs) and SiC nanowhiskers (SiCNWs) were characterised using SEM and XRD. In addition, their dielectric properties and microwave absorbing properties were measured using network analyser and transmission line theory. It was found that SiCNWs achieved higher dielectric constant and loss factor which are and εr’ =17.94 and εr″ = 2.64 compared to SiCNPs that only achieved εr’ = 2.83 and εr″ = 0.71. For microwave absorbing properties, SiCNWs and SiCNPs attained minimum reflection loss of -10.41 dB and -6.83 dB at 5.68 GHz and 17.68 GHz, respectively. The minimum reflection loss of SiCNPs and SiCNWs obtained in this study is much lower than the nanometer-SiC reported previously. These results suggested that SiCNWs can be an ideal candidate of microwave susceptors for various microwave applications.

Topics

• nanoparticle
• impedance spectroscopy
• surface
• scanning electron microscopy
• x-ray diffraction
• theory
• dielectric constant
• carbide
• Silicon