| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Halbwax, Mathieu
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (19/19 displayed)
- 20193D Patterning of Si by Contact Etching With Nanoporous Metalscitations
- 2019A new method of dielectric characterization using a genetic algorithm and a coplanar waveguide on bilayer films
- 2017Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applicationscitations
- 2017Advances in silicon surface texturization by metal assisted chemical etching for photovoltaic applicationscitations
- 20173D patterning of silicon by contact etching with anodically biased nanoporous gold electrodescitations
- 2017Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes
- 2016Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias
- 2016Tunable Nanostructuration of Si by MACE with Pt nanoparticles under an applied external bias
- 2016Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Biascitations
- 2016Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching
- 2016Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching
- 2014Electro-optic and converse-piezoelectric properties of epitaxial GaN grown on silicon by metal-organic chemical vapor depositioncitations
- 2012Antireflective sol-gel TiO2 thin films for single crystal silicon and textured polycrystal siliconcitations
- 2010Measurement of the microwave permittivity of polymer materials for high-speed optical modulator design
- 2010Measurement of the microwave permittivity of polymer materials for high-speed optical modulator design
- 2010Structure optimization of electro-optic polymer waveguides for low half-wave voltage modulatorscitations
- 2007Epitaxial growth of Ge on a thin SiO2 layer by ultrahigh vacuum chemical vapor depositioncitations
- 2004Microstructuration of Silicon Surfaces Using Nanoporous Gold Electrodes
- 2004Deposition and characterisation of Ge layers epitaxial grown on silicon for the fabrication of waveguide photodetector.
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document
A new method of dielectric characterization using a genetic algorithm and a coplanar waveguide on bilayer films
Abstract
Fine characterization of the dielectric properties (r and tanδ) of materials in the microwave, and above, domain is a mandatory step to optimize the performance of components working in this frequency range. When reaching the millimeter frequency range, the conventional parallel plate condenser technique shows its limits by the increasing part of parasitic in the measurement data that makes their de-embedding much more complex. Characterization techniques based on resonant cavity or microring resonator can then be used but they rely on complex fabrication and analytical de-embedding processes. Moreover their validity domain rarely exceeds a few tens of GHz. Using techniques based on propagation lines allows then to overcome this limitation since the material complex permittivity plays a determinant role in their propagation characteristics; those being easily measured using microwave probe stations. Microstrip or (grounded) coplanar waveguide, (G)CPW, lines, for example, can then be designed and measured up to 100 GHz of bandwidth. A novel method to characterize polymer materials has then been built on such a concept [4], it was used with a bandwidth of approximately 40 GHz.We are currently working on a further development of this technique that is now applied to bi-layer dielectric films. Indeed adding a top layer of known material on the unknown material film to be characterized can help to protect the latter from different technological processes that can be aggressive (for example, lithography processes are, for most of polymers, incompatible because of the photoresist solvent). GCPW lines are characterized by their S- parameters in the 450 MHz to 110 GHz bandwidth measured using a vector network analyzer (VNA). Those data are used as reference for a genetic algorithm (GA) which generates r and tanδ. The algorithm offers a good compromise between de-embedding accuracy and time of calculation.This paper will present the details of this determination process. First of all, we will discuss how this solution works and show that the only limitation is the actual bandwidth of the probes used for different VNAs. In a second time, we will show the different advantages of this method, they have been slightly presented earlier but we will advance them more clearly. Finally, we will show the results of characterization on a well-known material, the Benzocyclobutene (BCB), in our case, the GA returns us the couple r and tanδ respectively equal to 2,77 and 7x10−3 which is in good agreement with literature.