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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Albaric, Mickael
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article
Tracking Hydrogen During Poly-Si/SiOx Contact Fabrication: An Infrared Spectroscopy Analysis of Si–H Bonds Configurations
Abstract
The hydrogenation step contributing to the high efficiencies (>25%) reached with poly-Si/SiOx passivated contacts solar cells is still poorly understood. In this study, Fourier transform infrared spectroscopy (FTIR) is used to follow the different bonding configurations of H during the fabrication process. The carrier lifetime degradation upon annealing is correlated to an important loss of Si–H bonds, from both the a‑Si:H film and the SiOx interfaces. The subsequent hydrogenation step results in the formation of a small number of Si–H bonds near the crystalline silicon c-Si/SiOx interface, associated with the low stretching mode (LSM) and correlated to a significant lifetime improvement. These bonds feature a preferential orientation, as shown by polarized measurements.