| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Glunz, Stefan
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2024Remanufacturing perovskite solar cells and modules – a holistic case studycitations
- 2024Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
- 2023In Situ Crystallization of the Inorganic Lead-Free Halide Double Perovskite Cs2AgBiBr6 via Spray-Dryingcitations
- 2022Remanufacturing Perovskite Solar Cells and Modules – a Holistic Case Studycitations
- 2022Plated Copper Electrodes for Two-Terminal Perovskite/Silicon Tandem Solar Cellscitations
- 2020Perovskite hybrid evaporation/ spin coating method: From band gap tuning to thin film deposition on texturescitations
Places of action
| Organizations | Location | People |
|---|
article
Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
Abstract
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is an attractive tool for TOPCon production, as it enables uniformly in situ doped amorphous silicon (a-Si) and dielectric layer depositions with high throughput. However, a lean process requires in situ interfacial oxide growth in the same tool. In this work, we use Plasma-Assisted N2O Oxidation (PANO) in an industrial kHz direct plasma reactor (centrotherm c.PLASMA) to grow the oxide and deposit in situ phosphorus doped a-Si(n) as well as SiNx on asymmetric lifetime samples. Before optimization, the oxide thickness is non uniform on the wafer, and we show that it correlates with the passivation, the contact resistivity, and the doping profile in n-type TOPCon test structures. The passivation seems to benefit more from moderate in-diffusion in the case with PANO than in the case with thermal oxidation. This is probably due to enhanced field-effect passivation compensating for lower chemical passivation, which likely results from plasma-induced damage. After studying the influence of PANO process parameters on the oxide thickness and uniformity, we optimize them to obtain a non-uniformity as low as ±2% and a recombination current density down to 2.3 fA/cm² on planar wafers.