| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Steinhauser, Bernd
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
- 2023Comparing the Gettering Effect of Heavily Doped Polysilicon Films and its Implications for Tunnel Oxide-Passivated Contact Solar Cellscitations
- 2022Plating Metallization for Bifacial i-TOPCon Silicon Solar Cellscitations
- 2022TOPCon Silicon Solar Cells with Selectively Doped PECVD Layers Realized by Inkjet-Printing of Phosphorus Dopant Sourcescitations
- 2022Status and perspective of industrial TOPCon solar cell development at Fraunhofer ISE
- 2022Progress of plated metallization for industrial bifacial TOPCon silicon solar cellscitations
- 2022Enabling savings in silver consumption and poly-Si thickness by integration of plated Ni/Cu/Ag contacts for bifacial TOPCon solar cellscitations
- 2021A round Robin-Highliting on the passivating contact technologycitations
- 2021Influence of Plasma-Enhanced Chemical Vapor Deposition Poly-Si Layer Thickness on the Wrap-Around and the Quantum Efficiency of Bifacial n-TOPCon (Tunnel Oxide Passivated Contact) Solar Cellscitations
- 2021Direct Contact Electroplating Sequence without Initial Seed Layer for Bifacial TOPCon Solar Cell Metallizationcitations
- 2020Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thicknesscitations
- 2016Solar cells with 20% efficiency and lifetime evaluation of epitaxial waferscitations
- 2014Plated Nickel-Copper contacts on c-Si. From microelectronic processing to cost effective silicon solar cell production
- 201421.8% efficient n-type solar cells with industrially feasible plated metallizationcitations
Places of action
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article
Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
Abstract
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is an attractive tool for TOPCon production, as it enables uniformly in situ doped amorphous silicon (a-Si) and dielectric layer depositions with high throughput. However, a lean process requires in situ interfacial oxide growth in the same tool. In this work, we use Plasma-Assisted N2O Oxidation (PANO) in an industrial kHz direct plasma reactor (centrotherm c.PLASMA) to grow the oxide and deposit in situ phosphorus doped a-Si(n) as well as SiNx on asymmetric lifetime samples. Before optimization, the oxide thickness is non uniform on the wafer, and we show that it correlates with the passivation, the contact resistivity, and the doping profile in n-type TOPCon test structures. The passivation seems to benefit more from moderate in-diffusion in the case with PANO than in the case with thermal oxidation. This is probably due to enhanced field-effect passivation compensating for lower chemical passivation, which likely results from plasma-induced damage. After studying the influence of PANO process parameters on the oxide thickness and uniformity, we optimize them to obtain a non-uniformity as low as ±2% and a recombination current density down to 2.3 fA/cm² on planar wafers.