| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Polzin, Jana-Isabelle
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
- 2023Comparing the Gettering Effect of Heavily Doped Polysilicon Films and its Implications for Tunnel Oxide-Passivated Contact Solar Cellscitations
- 2022Measurement of poly-Si film thickness on textured surfaces by X-ray diffraction in poly-Si/SiOx passivating contacts for monocrystalline Si solar cellscitations
- 2021Influence of Intrinsic Silicon Layer and Intermediate Silicon Oxide Layer on the Performance of Inline PECVD Deposited Boron-Doped TOPConcitations
- 2020Intense pulsed light in back end processing of solar cells with passivating contacts based on amorphous or polycrystalline silicon layerscitations
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article
Plasma-Assisted N2O Oxidation (PANO) in an Industrial Direct Plasma Reactor for TOPCon Production
Abstract
Plasma-Enhanced Chemical Vapor Deposition (PECVD) is an attractive tool for TOPCon production, as it enables uniformly in situ doped amorphous silicon (a-Si) and dielectric layer depositions with high throughput. However, a lean process requires in situ interfacial oxide growth in the same tool. In this work, we use Plasma-Assisted N2O Oxidation (PANO) in an industrial kHz direct plasma reactor (centrotherm c.PLASMA) to grow the oxide and deposit in situ phosphorus doped a-Si(n) as well as SiNx on asymmetric lifetime samples. Before optimization, the oxide thickness is non uniform on the wafer, and we show that it correlates with the passivation, the contact resistivity, and the doping profile in n-type TOPCon test structures. The passivation seems to benefit more from moderate in-diffusion in the case with PANO than in the case with thermal oxidation. This is probably due to enhanced field-effect passivation compensating for lower chemical passivation, which likely results from plasma-induced damage. After studying the influence of PANO process parameters on the oxide thickness and uniformity, we optimize them to obtain a non-uniformity as low as ±2% and a recombination current density down to 2.3 fA/cm² on planar wafers.