| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Waag, Andreas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2023A Combination of Ion Implantation and High‐Temperature Annealing: Donor–Acceptor Pairs in Carbon‐Implanted AlNcitations
- 2021Point defect-induced UV-C absorption in aluminum nitride epitaxial layers grown on sapphire substrates by metal-organic chemical vapor deposition
- 2021Ultrashort Pulse Laser Lift-Off Processing of InGaN/GaN Light-Emitting Diode Chipscitations
- 2020Toward three-dimensional hybrid inorganic/organic optoelectronics based on GaN/oCVD-PEDOT structurescitations
- 2020Plasma profiling time-of-flight mass spectrometry for fast elemental analysis of semiconductor structures with depth resolution in the nanometer rangecitations
- 2019Top-down GaN nanowire transistors with nearly zero gate hysteresis for parallel vertical electronicscitations
- 2018Defect generation by nitrogen during pulsed sputter deposition of GaNcitations
- 20183D GaN Fins as a Versatile Platform for a-Plane-Based Devices
- 2017Enhanced Photoelectrochemical Behavior of H-TiO2 Nanorods Hydrogenated by Controlled and Local Rapid Thermal Annealing.citations
- 2016The influence of MOVPE growth conditions on the shell of core-shell GaN microrod structurescitations
- 2010GaN and ZnO nanostructurescitations
- 2001BeCdSe as a ternary alloy for blue-green optoelectronic applicationscitations
- 2001Spin Manipulation Using Magnetic II–VI Semiconductorscitations
- 2000Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
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document
Semimagnetic Resonant Tunneling Diodes for Electron Spin Manipulation
Abstract
ecently, efficient electrical injection of spin polarized electrons into GaAs bas been accomplished by using a semimagnetic II-VI single layer, namely BeMnZnSe, as a spin aligner. In such spin aligner materials. the orientation of the electron spins can only be controlled by varying the magnetic field. Here, we introduce an approach aiming at manipulating spins by an external voltage. For that we developed BeTe/ZnMnSe/BeTe semimagnetic resonant tunneling diodes as a spin injector into nonmagnetic III-V material. By changing the resonance condition from a spin-up to spin-down Zeeman level, it should be possible to actually switch from one spin orientation to the other. An AlGaAs/GaAs/AlGaAs p-i-n Light Emitting Diode was used to detect the efficiency of the spin injection, because the circular polarization of the electroluminescence is a direct measure of the spin polarization of the injected electron current. Although no spin-splitting of the bound electron states in the ZnMNSe quantum well could be observed in current-voltage-measurements. electroluminescence from the LED revealed a high circular polarization of up to 70%, indicating a strongly spin-polarized electron current. The use of a semimagnetic RTD as a spin-switch device would represent a further important step towards spin manipulation in semiconductors.