People | Locations | Statistics |
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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kessels, W. M. M.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (161/161 displayed)
- 2024Atomic layer deposition of transition metal chalcogenide TaSx using Ta[N(CH3)2]3[NC(CH3)3] precursor and H2S plasma
- 2024Surface passivation approaches for silicon, germanium, and III–V semiconductorscitations
- 2024Structural Aspects of MoSx Prepared by Atomic Layer Deposition for Hydrogen Evolution Reactioncitations
- 2024Nb Doping and Alloying of 2D WS2 by Atomic Layer Deposition for 2D Transition Metal Dichalcogenide Transistors and HER Electrocatalystscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowires:Implications for SiGe-Based Nanolaserscitations
- 2024Low Surface Recombination in Hexagonal SiGe Alloy Nanowirescitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023Toolbox of Advanced Atomic Layer Deposition Processes for Tailoring Large-Area MoS2 Thin Films at 150 °Ccitations
- 2023Computational investigation of precursor blocking during area-selective atomic layer deposition using aniline as a small molecule inhibitorcitations
- 2023Computational investigation of precursor blocking during area-selective atomic layer deposition using aniline as a small molecule inhibitorcitations
- 2023In Situ IR SpectroscopyStudies of AtomicLayer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskitecitations
- 2023In Situ IR SpectroscopyStudies of AtomicLayer-Deposited SnO2 on Formamidinium-Based Lead Halide Perovskitecitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023MoS2 Synthesized by Atomic Layer Deposition as Cu Diffusion Barriercitations
- 2023ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistorscitations
- 2022Growth Mechanism and Film Properties of Atomic-Layer-Deposited Titanium Oxysulfidecitations
- 2022Surface chemistry during Atomic Layer Deposition of Pt studied with vibrational sum-frequency generationcitations
- 2022Atomic Layer Deposition of Large-Area Polycrystalline Transition Metal Dichalcogenides from 100 °C through Control of Plasma Chemistrycitations
- 2022Controlling transition metal atomic ordering in two-dimensional Mo1- xW xS2alloyscitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Temporal and spatial atomic layer deposition of Al-doped zinc oxide as a passivating conductive contact for silicon solar cellscitations
- 2022Atomic layer deposition of conductive and semiconductive oxidescitations
- 2022Effective Hydrogenation of Poly-Si Passivating Contacts by Atomic-Layer-Deposited Nickel Oxidecitations
- 2022POx/Al2O3 stacks for surface passivation of Si and InPcitations
- 2022Plasma-Enhanced Atomic Layer Deposition of HfO2 with Substrate Biasing: Thin Films for High-Reflective Mirrorscitations
- 2021Conformal Growth of Nanometer-Thick Transition Metal Dichalcogenide TiSx‑NbSx Heterostructures over 3D Substrates by Atomic Layer Deposition: Implications for Device Fabricationcitations
- 2021On the Contact Optimization of ALD-Based MoS2 FETs: Correlation of Processing Conditions and Interface Chemistry with Device Electrical Performancecitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Surface passivation of germanium by atomic layer deposited Al2O3 nanolayerscitations
- 2021Atomic insights into the oxygen incorporation in atomic layer deposited conductive nitrides and its mitigation by energetic ionscitations
- 2021Excellent surface passivation of germanium by a-Si:H/Al2O3 stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2020Self-aligned local contact opening and n+ diffusion by single-step laser doping from POx/Al2O3 passivation stackscitations
- 2020The chemistry and energetics of the interface between metal halide perovskite and atomic layer deposited metal oxidescitations
- 2020Probing the origin and suppression of vertically oriented nanostructures of 2D WS2 layerscitations
- 2020Effect of an electric field during the deposition of silicon dioxide thin films by plasma enhanced atomic layer deposition: An experimental and computational studycitations
- 2020Improved Passivation of n-Type Poly-Si Based Passivating Contacts by the Application of Hydrogen-Rich Transparent Conductive Oxidescitations
- 2020Atomic layer deposition of cobalt phosphate from cobaltocene, trimethylphosphate, and O2 plasmacitations
- 2020Thermal and Plasma Enhanced Atomic Layer Deposition of Al[sub 2]O[sub 3] on GaAs Substratescitations
- 2019Chemical analysis of the interface between hybrid organic−inorganic perovskite and atomic layer deposited Al2O3citations
- 2019Performance and thermal stability of an a-Si:H/TiOx/Yb stack as an electron-selective contact in silicon heterojunction solar cellscitations
- 2019Plasma-assisted ALD of LiPO(N) for solid state batteriescitations
- 2019Enhancement of the photocurrent and efficiency of CdTe solar cells suppressing the front contact reflection using a highly-resistive ZnO buffer layercitations
- 2019Atomic layer deposition of cobalt phosphate thin films for the oxygen evolution reactioncitations
- 2018Pt-graphene contacts fabricated by plasma functionalization and atomic layer depositioncitations
- 2018Investigation of crystalline silicon surface passivation by positively charged PO x /Al 2 O 3 stackscitations
- 2018Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography:
- 2018Characterization of nano-porosity in molecular layer deposited films:
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiOx stack and a low work function metalcitations
- 2018Controlling mechanical, structural, and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasingcitations
- 2018Status and prospects for atomic layer Deposited metal oxide thin films in passivating contacts for c-Si photovoltaics
- 2018Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasmacitations
- 2018Passivating electron-selective contacts for silicon solar cells based on an a-Si:H/TiO x stack and a low work function metalcitations
- 2018Comparison of thermal and plasma-enhanced atomic layer deposition of niobium oxide thin filmscitations
- 2018Characterization of nano-porosity in molecular layer deposited filmscitations
- 2018Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographiescitations
- 2018Low-temperature plasma-enhanced atomic layer deposition of 2-D MoS 2 :Large area, thickness control and tuneable morphologycitations
- 2018Low resistivity HfN : X grown by plasma-assisted ALD with external rf substrate biasingcitations
- 2018Isotropic Atomic Layer Etching of ZnO on 2D and 3D substrates, using acetylacetone and O2 plasma:
- 2017Plasma-assisted atomic layer deposition of HfNx: tailoring the film properties by the plasma gas compositioncitations
- 2017Atomic layer deposition for perovskite solar cells:Research status, opportunities and challengescitations
- 2017Atomic layer deposition of highly dispersed Pt nanoparticles on a high surface area electrode backbone for electrochemical promotion of catalysiscitations
- 2017Atomic layer deposition of highly dispersed Pt nanoparticles on a high surface area electrode backbone for electrochemical promotion of catalysis
- 2017Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasmacitations
- 2017On the synergistic effect of inorganic/inorganic barrier layers: an ellipsometric porosimetry investigationcitations
- 2017Towards the implementation of atomic layer deposited In 2 O 3 :H in silicon heterojunction solar cellscitations
- 2017Strong suppression of surface recombination in InGaAs nanopillars
- 2017Effective surface passivation of InP nanowires by atomic-layer-deposited Al 2 O 3 with PO x interlayercitations
- 2017Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenchescitations
- 2017Graphene devices with bottom-up contacts by area-selective atomic layer depositioncitations
- 2017Atomic layer deposition of aluminum fluoride using Al(CH 3 ) 3 and SF 6 plasmacitations
- 2016On the growth, percolation and wetting of silver thin films grown by atmospheric-plasma enhanced spatial atomic layer depositioncitations
- 2016Dynamic ellipsometric porosimetry investigation of permeation pathways in moisture barrier layers on polymerscitations
- 2016In situ spectroscopic ellipsometry during atomic layer deposition of Pt, Ru and Pdcitations
- 2016Plasma-assisted ALD of LiPO(N) for solid state batteriescitations
- 2016Metal-insulator-semiconductor nanowire network solar cellscitations
- 2016Device architectures with nanocrystalline mesoporous scaffolds and thin compact layers for flexible perovskite solar cells and modules
- 2015Atomic layer etching : what can we learn from atomic layer deposition?citations
- 2015A spatial ALD oxide passivation module in an all-spatial etch-passivation cluster conceptcitations
- 2015Role of surface termination in atomic layer deposition of silicon nitridecitations
- 2014Influence of stochiometry on the performance of MIM capacitors from plasma-assisted ALD SrxTiyOz filmscitations
- 2014Interaction between O2 and ZnO films probed by time-dependent second-harmonic generationcitations
- 2014Influence of stoichiometry on the performance of MIM capacitors from plasma-assisted ALD Sr x Ti y O z filmscitations
- 2014On the role of nanoporosity in controlling the performance of moisture permeation barrier layerscitations
- 2013Silicon surface passivation by aluminium oxide studied with electron energy loss spectroscopycitations
- 2013Room-temperature atomic layer deposition of platinumcitations
- 2013Passivation of n+-type Si surfaces by low temperature processed SiO2/Al2O3 stackcitations
- 2013History of atomic layer deposition and its relationship with the American Vacuum Societycitations
- 2013Influence of oxygen exposure on the nucleation of platinum atomic layer deposition : consequences for film growth, nanopatterning, and nanoparticle synthesiscitations
- 2013Substrate-biasing during plasma-assisted atomic layer deposition to tailor metal-oxide thin film growthcitations
- 2013Alternative technology concepts for low-cost and high-speed 2D and 3D interconnect manufacturing
- 2013C-Si surface passivation by aluminum oxide studied with electron energy loss spectroscopycitations
- 2013Direct-wire atomic layer deposition of high-quality Pt nanostructures : selective growth conditions and seed layer requirementscitations
- 2013Catalytic surface reactions during nucleation and growth of atomic layer deposition of noble metals : a case study for platinumcitations
- 2013A new concept for spatially divided deep reactive ion etching with ALD based passivationcitations
- 2012Concept of spatially-divided deep reactive ion etching of si using oxide atomic layer deposition in the passivation cycle
- 2012Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interfacecitations
- 2012Supported core/shell bimetallic nanoparticles synthesis by atomic layer depositioncitations
- 2012Status and prospects of Al2O3 –based surface passivation schemes for silicon solar cellscitations
- 2012Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al2O3 films and Al2O3/a-SiNx: H stackscitations
- 2012Dehydrogenation reactions during atomic layer deposition of Ru using O2citations
- 2012CO3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer depositioncitations
- 2012A new concept for spatially divided Deep Reactive Ion Etching with ALD-based passivationcitations
- 2012Plasma-enhanced chemical vapor deposition of aluminum oxide using ultrashort precursor injection pulsescitations
- 2012Atomic layer deposition for photovoltaics : applications and prospects for solar cell manufacturingcitations
- 2012Substrate biasing during plasma-assisted ALD for crystalline phase-control of TiO2 thin filmscitations
- 2012Analysis of blister formation in spatial ALD Al 2 O 3 for silicon surface passivationcitations
- 2011Enhancing the wettability of high aspect-ratio through-silicon vias lined with LPCVD silicon nitride or PE-ALD titanium nitride for void-free bottom-up copper electroplatingcitations
- 2011High surface passivation quality and thermal stability of ALD Al2O3 on wet chemical grown ultra-thin SiO2 on siliconcitations
- 2011Dielectric properties of thermal and plasma-assisted atomic layer deposition Al2O3 thin filmscitations
- 2011Ion and photon surface interaction during remote plasma ALD of metal oxidescitations
- 2011Remote plasma atomic layer deposition of thin films of electrochemically active LiCoO2citations
- 2011Plasma-assisted atomic layer deposition of SrTiO3 : stoichiometry and crystallization study by spectroscopic ellipsometrycitations
- 2011Ultra-thin aluminium oxide films deposited by plasma-enhanced atomic layer deposition for corrosion protectioncitations
- 2011Remote plasma atomic layer deposition of Co3O4 thin filmscitations
- 2011Atomic layer deposition of Ru from CpRu(CO2)Et using O2 gas and O2 plasmacitations
- 2011Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating
- 2010Influence of the deposition temperature on the c-Si Surface passivation by Al2 O3 films synthesized by ALD and PECVDcitations
- 2010The influence of ions and photons during plasma-assited ALD of metal oxidescitations
- 2010Bis(cyclopentadienyl) zirconium(IV) amides as possible precursors for low pressure CVD and plasma-enhanced ALDcitations
- 2010Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processescitations
- 2010Expanding thermal plasma deposited a-Si:H thin films for surface passivation of c-Si waferscitations
- 2010Conformality of plasma-assisted ALD: physical processes and modelingcitations
- 2010Low temperature plasma-enhanced atomic layer deposition of metal oxide thin filmscitations
- 2009Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applicationscitations
- 2009In situ spectroscopic ellipsometry as a versatile tool for studying atomic layer depositioncitations
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3 on GaAs substrates
- 2009Oxidized ALD-deposited titanium nitride films as a low-temperature alternative for enhancing the wettability of through-silicon via sidewalls
- 2009Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers
- 2009Thermal and plasma enhanced atomic layer deposition of Al2O3on GaAs substratescitations
- 2009Silicon surface passivation by hot-wire CVD Si thin films studied by in situ surface spectroscopycitations
- 2009Remote plasma atomic layer deposition of Co3O4 thin films
- 2009The atomic hydrogen flux during microcrystalline silicon solar cell deposition
- 2009Surface Passivation Mechanism of Atomic Layer Deposited Al2O3 Films on c-Si Studied by Optical Second-Harmonic Generation
- 2009Low temperature plasma-enhanced atomic layer deposition of metal oxide thin filmscitations
- 2009Atomic hydrogen induced defect kinetics in hydrogenated amorphous silicon : an in situ real time study
- 2008Real-time study of α-Si:H/c-Si heterointerface formation and epitaxial Si growth by spectroscopic ellipsometry, infrared spectroscopy, and second-harmonic generationcitations
- 2008Optical second-harmonic generation in thin film systemscitations
- 2008High efficiency n-type Si solar cells on Al2O3-passivated boron emitterscitations
- 2008Silicon surface passivation by hot-wire CVD Si thin films studied in situ surface spectroscopy
- 2008Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides : a case study for Al2O3citations
- 2008Atomic layer deposition of high-k dielectric layers on Ge and III-V MOS channelscitations
- 2008Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopycitations
- 2007On the film microstructure control by means of PE-CVD and PA-ALD
- 2007Optimization of plasma enhanced atomic layer deposition processes for oxides, nitrides and metals in the Oxford Instruments FlexAL reactorcitations
- 2007Optical properties of Y2O3 thin films doped with spatially controlled Er3+ by atomic layer depositioncitations
- 2007Plasma and thermal ALD of Al2O3 in a commercial 200 mm ALD reactorcitations
- 2007Transient depletion of source gases during materials processing: a case study on the plasma deposition of microcrystalline siliconcitations
- 2007Absolute in situ measurement of surface dangling bonds during a-Si:H growthcitations
- 2007Opportunities for plasma-assisted atomic layer depositioncitations
- 2007Film properties and in-situ optical analysis of TiO2 layers synthesized by remote plasma ALD
- 2007Film properties and in-situ optical analysis of TiO2 layers synthesized by remote plasma ALD
- 2006Plasma-assisted atomic layer deposition of Al2O3 moisture permeation barriers on polymerscitations
- 2005Surface-diffusion-controlled incorporation of nanosized voids during hydrogenated amorphous silicon film growthcitations
- 2004The a-Si:H growth mechanism and the role of H abstraction from the surface by SiH/sub 3/ radicals via an Eley-Rideal mechanismcitations
- 2003On the role of surface diffusion and its relation to the hydrogen incorporation during hydrogenated amorphous silicon growth
- 2003Temperature dependence of the surface roughness evolution during hydrogenated amorphous silicon film growthcitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cellscitations
- 2002High-rate microcrystalline silicon for solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasmacitations
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document
Film properties and in-situ optical analysis of TiO2 layers synthesized by remote plasma ALD
Abstract
TiO2 is a widely studied material due to its optical and photocatalytic properties and its hydrophilic nature after prolonged UV exposure. When synthesized by atomic layer deposition (ALD) the TiO2 can be deposited with ultimate growth control with a high conformality on demanding topologies and even at room temperature when e.g. using a plasma based process. We report on the deposition of TiO2 films using remote plasma ALD with titanium (IV) isopropoxide as precursor and O2 plasma as oxidant. Stochiometric TiO2 films with carbon and hydrogen levels below the detection limit of Rutherford backscattering/elastic recoil detection (<2 at.%) have been deposited within the temperature range of 25°C to 300°C. Depending on the ALD conditions and film thickness amorphous films turn anatase for temperatures higher than 200°C as revealed by X-ray diffraction. It is demonstrated that this change in crystal phase can also be observed by spectroscopic ellipsometry revealing an increase in growth rate per cycle (from typically 0.45 Å/cycle to 0.7 Å/cycle) and change in bandgap (from 3.4 eV to 3.7 eV) when the TiO2 becomes anatase. An accompanying change in surface topology is clearly observed by atomic force microscopy. The hydrophilicity of low temperature TiO2 films is studied by contact angle measurements for adhesion purposes revealing that the amorphous films are super-hydrophilic after UV exposure.