| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Harmand, Jean-Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Selective Area Growth of GaN μ-Platelets on Graphene
- 2023A systematic study of spin-dependent recombination in GaAs1-xNx as a function of nitrogen contentcitations
- 2022Statistics of Nucleation and Growth of Single Monolayers in Nanowires: Towards a Deterministic Regime ; Statistiques de nucléation et croissance des monocouches individuelles dans un nanofil : Vers un régime déterministecitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Importance of point defect reactions for the atomic-scale roughness of III-V nanowire sidewallscitations
- 2019Growth Dynamics of Gallium Nanodroplets Driven by Thermally Activated Surface Diffusioncitations
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2017Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
- 2016Photon Cascade from a Single Crystal Phase Nanowire Quantum Dotcitations
Places of action
| Organizations | Location | People |
|---|
conferencepaper
Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires
Abstract
We present a new method to determine the doping level of n-type semiconductors at the nanoscale. Low-temperature and room-temperature cathodoluminescence (CL) measurements are carried out on single Si-doped GaAs nanowires. The spectral shift and the broadening of luminescence spectra are a signature of an increased density of electrons. They are compared to CL spectra of well-calibrated planar Si-doped GaAs layers whose doping levels are determined by Hall measurements and compared to previous experimental studies. We infer a n-type doping of 1×10 18 cm-3 to 2×10 18 cm-3 , with a high spatial homogeneity along the nanowire. These results show that cathodoluminescence provides an alternative way to probe carrier concentration in nanostructured and polycrystalline semiconductors, and to map the spatial inhomogeneity of dopants.