| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Coinon, Christophe
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022GAP(111)B-SE Surface for TMD epitaxial growth
- 2022In-plane InGaAs/Ga(As)Sb nanowire based tunnel junctions grown by selective area molecular beam epitaxycitations
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Pushing the limit of lithography for patterning two-dimensional lattices in III-V semiconductor quantum wellscitations
- 2020Engineering a Robust Flat Band in III–V Semiconductor Heterostructurescitations
- 2019InAlAs/InGaAs-MSM photodetectors based on optical cavity using metallic mirrors: THz frequency operation, high quantum efficiency and high saturation currentcitations
- 2018Chemical nature of the anion antisite in dilute phosphide GaAs1−xPx alloy grown at low temperaturecitations
- 2017V-shaped InAs/Al<sub>0.5</sub>Ga<sub>0.5</sub>Sb vertical tunnel FET on GaAs (001) substrate with I<sub>ON</sub>=433 µA.µm<sup>-1</sup> at V<sub>DS</sub>= 0.5Vcitations
- 2017V-shaped InAs/Al 0.5 Ga 0.5 Sb vertical tunnel FET on GaAs (001) substrate with I ON =433 µA.µm -1 at V DS = 0.5Vcitations
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document
GAP(111)B-SE Surface for TMD epitaxial growth
Abstract
Over the past few years, 2D-Transition Metal Dichalcogenides (TMDs) have revealed great potential for optoelectronics and nanoelectronics devices, thanks to their exceptional properties, not encountered in other materials. They can be grown by van der Waals epitaxy allowing the use of materials with significant mismatch. Van der Waals epitaxy is usually performed on 2D substrates such as graphene, hBN or mica but 3D substrates can also be used after a proper surface passivation treatment, which for III-V semiconductor substrates has been applied successfully on GaAs(111)B surfaces. Since rather high growth temperatures are needed in order to get high quality-TMD layers [1], GaP might represent an interesting alternative to GaAs considering its higher thermal stability. In this study, we present results relative to the preparation of n and p-type GaP(111)B surfaces and to their Selenium passivation.