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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Robert, Cédric Robert
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Publications (3/3 displayed)
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications
- 2013Structural and optical properties of AlGaP confinement layers and InGaAs quantum dots light emitters onto GaP substrate: towards photonics on silicon applicationcitations
- 2011Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
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document
Carrier injection in GaAsP(N)/GaPN Quantum Wells on Silicon
Abstract
We report efficient carrier injection in GaAsPN/GaPN quantum wells grown on Si. Electroluminescence of GaAsPN/GaPN and GaAsP/GaP quantum wells is first presented. Nitrogen is found to induce large bandgap bowing in the bandstructure as well as spectacular enhancement of radiative quantum efficiency. Tight-binding bandstructure calculations are then presented which reveal N-induced large bandgap modification. N-localised levels are supposed to play significant role in carrier injection inside GaAsPN/GaPN quantum wells while disorder alloying effects also participate to the achievement of such a high quantum efficiency. GaAsP/GaP and GaAsPN/GaPN quantum wells are finally grown on Silicon substrate, very near the GaP/Si interface. High resolution transmision electron microscopy performed on GaAsP/GaP/Si quantum wells indicate good strain status, as well as GaP/Si interface originating defects. Photoluminescence is finally detected at 810 nm up to 230K on silicon substrate from GaAsPN/GaPN quantum wells. This is explained by both a better carrier injection efficiency related to N-localized energy levels as well as a higher quantum efficiency than GaAsP/GaP/Si quantum wells.